Literature DB >> 26414685

Origin of Noise in Layered MoTe₂ Transistors and its Possible Use for Environmental Sensors.

Yen-Fu Lin1, Yong Xu2, Che-Yi Lin1, Yuen-Wuu Suen1, Mahito Yamamoto3, Shu Nakaharai3, Keiji Ueno4, Kazuhito Tsukagoshi3.   

Abstract

Low-frequency current fluctuations are monitored and the mechanism of electric noise investigated in layered 2H-type α-molybdenum ditelluride transistors. The charge transport mechanism of electric noise in atomically thin transition-metal dichalcogenides is studied under different environments; the development of a new sensing functionality may be stimulated.
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  MoTe2; low-frequency noise; nanoscale electronics; random telegraph signals; transition metal dichalcogenides

Year:  2015        PMID： 26414685     DOI： 10.1002/adma.201502677

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  9 in total

Review 1.  Advanced Strategies to Improve Performances of Molybdenum-Based Gas Sensors.

Authors:  Angga Hermawan; Ni Luh Wulan Septiani; Ardiansyah Taufik; Brian Yuliarto; Shu Yin
Journal:  Nanomicro Lett       Date:  2021-10-11

2.  Analysis of Low-Frequency 1/f Noise Characteristics for MoTe2 Ambipolar Field-Effect Transistors.

Authors:  Bing Zhang; Congzhen Hu; Youze Xin; Yaoxin Li; Yiyun Xie; Qian Xing; Zhuoqi Guo; Zhongming Xue; Dan Li; Guohe Zhang; Li Geng; Zungui Ke; Chi Wang
Journal:  Nanomaterials (Basel)       Date:  2022-04-12       Impact factor: 5.719

Review 3.  Molybdenum Dichalcogenides for Environmental Chemical Sensing.

Authors:  Dario Zappa
Journal:  Materials (Basel)       Date:  2017-12-12       Impact factor: 3.623

Review 4.  Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors.

Authors:  Sohail Ahmed; Jiabao Yi
Journal:  Nanomicro Lett       Date:  2017-08-16

5.  Formation of an MoTe2 based Schottky junction employing ultra-low and high resistive metal contacts.

Authors:  Sikandar Aftab; Muhammad Waqas Iqbal; Amir Muhammad Afzal; M Farooq Khan; Ghulam Hussain; Hafiza Sumaira Waheed; Muhammad Arshad Kamran
Journal:  RSC Adv       Date:  2019-03-29       Impact factor: 4.036

6.  Modulation of electrical properties in MoTe2 by XeF2-mediated surface oxidation.

Authors:  Eunji Ji; Jong Hun Kim; Wanggon Lee; June-Chul Shin; Hyungtak Seo; Kyuwook Ihm; Jin-Woo Park; Gwan-Hyoung Lee
Journal:  Nanoscale Adv       Date:  2022-01-05

7.  Reversible Charge-Polarity Control for Multioperation-Mode Transistors Based on van der Waals Heterostructures.

Authors:  Ciao-Fen Chen; Shih-Hsien Yang; Che-Yi Lin; Mu-Pai Lee; Meng-Yu Tsai; Feng-Shou Yang; Yuan-Ming Chang; Mengjiao Li; Ko-Chun Lee; Keiji Ueno; Yumeng Shi; Chen-Hsin Lien; Wen-Wei Wu; Po-Wen Chiu; Wenwu Li; Shun-Tsung Lo; Yen-Fu Lin
Journal:  Adv Sci (Weinh)       Date:  2022-07-13       Impact factor: 17.521

8.  Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features.

Authors:  Feng-Shou Yang; Mengjiao Li; Mu-Pai Lee; I-Ying Ho; Jiann-Yeu Chen; Haifeng Ling; Yuanzhe Li; Jen-Kuei Chang; Shih-Hsien Yang; Yuan-Ming Chang; Ko-Chun Lee; Yi-Chia Chou; Ching-Hwa Ho; Wenwu Li; Chen-Hsin Lien; Yen-Fu Lin
Journal:  Nat Commun       Date:  2020-06-12       Impact factor: 14.919

9.  Probing Charge Transport Difference in Parallel and Vertical Layered Electronics with Thin Graphite Source/Drain Contacts.

Authors:  Jiayi Li; Ko-Chun Lee; Meng-Hsun Hsieh; Shih-Hsien Yang; Yuan-Ming Chang; Jen-Kuei Chang; Che-Yi Lin; Yen-Fu Lin
Journal:  Sci Rep       Date:  2019-12-27       Impact factor: 4.379
  9 in total

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