| Literature DB >> 26406713 |
Domenico D'Agostino, Giuseppe Carnicella, Caterina Ciminelli, Peter Thijs, Petrus J Veldhoven, Huub Ambrosius, Meint Smit.
Abstract
Generic InP foundry processes allow monolithic integration of active and passive elements into a common p-n doped layerstack. The passive loss can be greatly reduced by restricting the p-dopant to active regions. We report on a localized Zn-diffusion process based on MOVPE, which allows to reduce waveguide loss from 2 dB/cm to below 0.4 dB/cm. We confirm this value by fabrication of a 73 mm long spiral ring resonator, with a record quality factor of 1.2 million and an extinction ratio of 9.7 dB.Entities:
Year: 2015 PMID: 26406713 DOI: 10.1364/OE.23.025143
Source DB: PubMed Journal: Opt Express ISSN: 1094-4087 Impact factor: 3.894