| Literature DB >> 26389902 |
Jinlong Song1,2, Chenyang Xue3,4, Changde He5,6, Rui Zhang7,8, Linfeng Mu9,10, Juan Cui11,12, Jing Miao13,14, Yuan Liu15,16, Wendong Zhang17,18.
Abstract
A capacitive micromachined ultrasonic transducer structure for use in underwater imaging is designed, fabricated and tested in this paper. In this structure, a silicon dioxide insulation layer is inserted between the top electrodes and the vibration membrane to prevent ohmic contact. The capacitance-voltage (C-V) characteristic curve shows that the transducer offers suitable levels of hysteresis and repeatability performance. The -6 dB center frequency is 540 kHz and the transducer has a bandwidth of 840 kHz for a relative bandwidth of 155%. Underwater pressure of 143.43 Pa is achieved 1 m away from the capacitive micromachined ultrasonic transducer under 20 Vpp excitation. Two-dimensional underwater ultrasonic imaging, which is able to prove that a rectangular object is present underwater, is achieved. The results presented here indicate that our work will be highly beneficial for the establishment of an underwater ultrasonic imaging system.Entities:
Keywords: C-V characteristic curve; CMUT; bandwidth; sound pressure; ultrasonic imaging
Year: 2015 PMID: 26389902 PMCID: PMC4610594 DOI: 10.3390/s150923205
Source DB: PubMed Journal: Sensors (Basel) ISSN: 1424-8220 Impact factor: 3.576
Figure 1(a) The cross-section of a sensitive cell; (b) The planform of an element.
The parameters of designed CMUT structure.
| Parameters | Value |
|---|---|
| Membrane radius/μm | 90 |
| Membrane thickness/μm | 2.8 |
| Electrode radius/μm | 45 |
| Electrode thickness/μm | 1 |
| Number of cells | 900 |
| Electrode insulation layer thickness/μm | 0.15 |
| Insulation layer thickness/μm | 0.15 |
| Cavity height/μm | 0.65 |
The detailed parameters of the silicon wafer and SOI wafer.
| Parameter | SOI Wafer | Silicon Wafer | |
|---|---|---|---|
| Size (inches) | 6 | 6 | |
| Conductive type | Device layer | P | P |
| Handle wafer | N | ||
| Resistivity (ohm∙cm) | Device layer | 0.01–0.08 | 0.01–0.02 |
| Handle wafer | 0.01–0.02 | ||
| Orientation | (100) | (100) | |
| Thickness (μm) | Device layer | 2.8 ± 0.1 | 400 ± 10 |
| Box layer | 0.8 ± 0.08 | ||
| Handle wafer | 430 ±15 | ||
Figure 2The main fabrication flow-chart.
Figure 3Final fabricated transducers on the 6 inch silicon wafer.
Figure 4The C-V character.
Figure 5(a) The experimental schematic diagram (b) The experimental configuration (c) the measurement and theoretical pressures at different distances (d) The −6 dB bandwidth.
The sound pressure at different distances.
| Distance/cm | Measurement Pressure/Pa | Theoretical Pressure/Pa | Derivation Pressure/Pa | |
|---|---|---|---|---|
| 1 | 10.00 | 786.7700 | 807.3977 | 20.6277 |
| 2 | 15.00 | 769.6664 | 733.4918 | −36.1746 |
| 3 | 20.00 | 701.2516 | 666.3509 | −34.9007 |
| 4 | 25.00 | 598.6294 | 605.3558 | 6.7264 |
| 5 | 30.00 | 513.1109 | 549.9440 | 36.8331 |
| 6 | 35.00 | 444.6961 | 499.6043 | 54.9082 |
| 7 | 40.00 | 461.7998 | 453.8725 | −7.9273 |
| 8 | 45.00 | 427.5924 | 412.3269 | −15.2655 |
| 9 | 50.00 | 393.3850 | 374.5841 | −18.8009 |
| 10 | 55.00 | 324.9702 | 340.2962 | 15.3260 |
| 11 | 60.00 | 307.8665 | 309.14684 | 1.28034 |
| 12 | 65.00 | 290.7628 | 280.8488 | −9.9140 |
| 13 | 70.00 | 273.6591 | 255.1410 | −18.5181 |
Figure 6(a) Schematic diagram of the distance testing experiment; (b) The transmitting and receiving signal when the distance between the two CMUTs; The frequency of the transmitting signal is 250 kHz; (c) The measurement and real distances between the two transducers.
The real and measurement distances between the two CMUTs.
| Real Distance/cm | Measurement Distance/cm | Deviation/cm | |
|---|---|---|---|
| 1 | 5 | 5.65 | 0.65 |
| 2 | 10 | 11.46 | 1.46 |
| 3 | 15 | 15.22 | 0.22 |
| 4 | 20 | 21.72 | 1.72 |
| 5 | 25 | 26.45 | 1.45 |
| 6 | 30 | 31.67 | 1.67 |
| 7 | 35 | 36.37 | 1.37 |
| 8 | 40 | 41.25 | 1.25 |
| 9 | 45 | 46.30 | 1.3 |
| 10 | 50 | 51.31 | 1.31 |
| 11 | 55 | 55.85 | 0.85 |
| 12 | 60 | 61.23 | 1.23 |
| 13 | 65 | 65.83 | 0.83 |
| 14 | 70 | 70.67 | 0.67 |
Figure 7(a) The underwater imaging experiment configuration; (b) The imaging result of the target.