| Literature DB >> 26378989 |
Xiaoming Yuan1, Philippe Caroff1, Jennifer Wong-Leung1, Lan Fu1, Hark Hoe Tan1, Chennupati Jagadish1.
Abstract
Controllable axial switching of polarity in GaAs nanowires with minimal tapering and perfect twin-free ZB structure based on the fundamental understanding of nanowire growth and kinking mechanism is presented. The polarity of the bottom segment is confirmed to be (111)A by atomically resolved scanning transmission electron microscopy.Keywords: GaAs; growth mechanisms; nanowires; polarity; surface energy
Year: 2015 PMID： 26378989 DOI： 10.1002/adma.201503540
Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849