Literature DB >> 26367665

Athermal and wavelength-trimmable photonic filters based on TiO₂-cladded amorphous-SOI.

Timo Lipka, Lennart Moldenhauer, Jörg Müller, Hoc Khiem Trieu.   

Abstract

Large-scale integrated silicon photonic circuits suffer from two inevitable issues that boost the overall power consumption. First, fabrication imperfections even on sub-nm scale result in spectral device non-uniformity that require fine-tuning during device operation. Second, the photonic devices need to be actively corrected to compensate thermal drifts. As a result significant amount of power is wasted if no athermal and wavelength-trimmable solutions are utilized. Consequently, in order to minimize the total power requirement of photonic circuits in a passive way, trimming methods are required to correct the device inhomogeneities from manufacturing and athermal solutions are essential to oppose temperature fluctuations of the passive/active components during run-time. We present an approach to fabricate CMOS backend-compatible and athermal passive photonic filters that can be corrected for fabrication inhomogeneities by UV-trimming based on low-loss amorphous-SOI waveguides with TiO2 cladding. The trimming of highly confined 10 μm ring resonators is proven over a free spectral range retaining athermal operation. The athermal functionality of 2nd-order 5 μm add/drop microrings is demonstrated over 40°C covering a broad wavelength interval of 60 nm.

Entities:  

Year:  2015        PMID: 26367665     DOI: 10.1364/OE.23.020075

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  1 in total

1.  Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics.

Authors:  Sandro Rao; Giovanni Pangallo; Francesco Giuseppe Della Corte
Journal:  Sensors (Basel)       Date:  2016-01-06       Impact factor: 3.576

  1 in total

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