A Physics-Based Three Dimensional Model for Write and Read Performances of Phase-Change Probe Memory.

The write and read performances of phase-change probe memory were investigated for the first time by a physics-based pure three dimensional model. The written crystalline bit possessed from this developed model demonstrates the potential of phase-change probe memory for ultra-high density, low energy consumption, high data rate, and good readability. The cross-talk effect on the write and read performances of phase-change probe memory, which can not be modelled by previous two dimensional models, is also evaluated. The findings showed that the bit and track pitches should be remained sufficiently long so as to eliminate the undesired interferences. The simulated results exhibited a good agreement with the experimental observations, thus demonstrating the physical reality of the designed model.