| Literature DB >> 26352780 |
Young-Gyun Jeong1, Sanghoon Han2, Jiyeah Rhie1, Ji-Soo Kyoung1, Jae-Wook Choi1, Namkyoo Park2, Seunghun Hong3, Bong-Jun Kim4, Hyun-Tak Kim4,5, Dai-Sik Kim1.
Abstract
We report that vanadium dioxide films patterned with λ/100000 nanogaps exhibit an anomalous transition behavior at millimeter wavelengths. Most of the hybrid structure's switching actions occur well below the insulator to metal transition temperature, starting from 25 °C, so that the hysteresis curves completely separate themselves from their bare film counterparts. It is found that thermally excited intrinsic carriers are responsible for this behavior by introducing enough loss in the context of the radically modified electromagnetic environment in the vicinity of the nanogaps. This phenomenon newly extends the versatility of insulator to metal transition devices to encompass their semiconductor properties.Entities:
Keywords: Boltzmann tail; Vanadium dioxide; insulator to metal transition; lithography; nano antenna; nanogap; terahertz spectroscopy; transition device
Year: 2015 PMID: 26352780 DOI: 10.1021/acs.nanolett.5b02361
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189