Literature DB >> 26340194

Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN.

Hong Li1,2, Lutz Geelhaar2, Henning Riechert2, Claudia Draxl1.   

Abstract

Crystal morphologies are important for the design and functionality of devices based on low-dimensional nanomaterials. The equilibrium crystal shape (ECS) is a key quantity in this context. It is determined by surface energies, which are hard to access experimentally but can generally be well predicted by first-principles methods. Unfortunately, this is not necessarily so for polar and semipolar surfaces of wurtzite crystals. By extending the concept of Wulff construction, we demonstrate that ECSs can nevertheless be obtained for this class of materials. For the example of GaN, we identify different crystal shapes depending on the chemical potential, shedding light on experimentally observed GaN nanostructures.

Entities:  

Year:  2015        PMID: 26340194     DOI: 10.1103/PhysRevLett.115.085503

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  4 in total

1.  Atomic-Scale Investigation of the Lattice-Asymmetry-Driven Anisotropic Sublimation in GaN.

Authors:  Shanshan Sheng; Tao Wang; Shangfeng Liu; Fang Liu; Bowen Sheng; Ye Yuan; Duo Li; Zhaoying Chen; Renchun Tao; Ling Chen; Baoqing Zhang; Jiajia Yang; Ping Wang; Ding Wang; Xiaoxiao Sun; Jingmin Zhang; Jun Xu; Weikun Ge; Bo Shen; Xinqiang Wang
Journal:  Adv Sci (Weinh)       Date:  2022-06-02       Impact factor: 17.521

2.  Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates.

Authors:  Florian Pantle; Fabian Becker; Max Kraut; Simon Wörle; Theresa Hoffmann; Sabrina Artmeier; Martin Stutzmann
Journal:  Nanoscale Adv       Date:  2021-05-05

3.  Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111).

Authors:  Roman Volkov; Nikolai I Borgardt; Oleg V Konovalov; Sergio Fernández-Garrido; Oliver Brandt; Vladimir M Kaganer
Journal:  Nanoscale Adv       Date:  2021-12-03

4.  Selective-area growth of single-crystal wurtzite GaN nanorods on SiOx/Si(001) substrates by reactive magnetron sputter epitaxy exhibiting single-mode lasing.

Authors:  Elena Alexandra Serban; Justinas Palisaitis; Chia-Cheng Yeh; Hsu-Cheng Hsu; Yu-Lin Tsai; Hao-Chung Kuo; Muhammad Junaid; Lars Hultman; Per Ola Åke Persson; Jens Birch; Ching-Lien Hsiao
Journal:  Sci Rep       Date:  2017-10-05       Impact factor: 4.379

  4 in total

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