| Literature DB >> 26334279 |
Jijun Xiong1,2, Chen Li3,4, Pinggang Jia5, Xiaoyong Chen6, Wendong Zhang7, Jun Liu8, Chenyang Xue9, Qiulin Tan10,11.
Abstract
Pressure measurements in high-temperature applications, including compressors, turbines, and others, have become increasingly critical. This paper proposes an implantable passive LC pressure sensor based on an alumina ceramic material for in situ pressure sensing in high-temperature environments. The inductance and capacitance elements of the sensor were designed independently and separated by a thermally insulating material, which is conducive to reducing the influence of the temperature on the inductance element and improving the quality factor of the sensor. In addition, the sensor was fabricated using thick film integrated technology from high-temperature materials that ensure stable operation of the sensor in high-temperature environments. Experimental results showed that the sensor accurately monitored pressures from 0 bar to 2 bar at temperatures up to 800 °C. The sensitivity, linearity, repeatability error, and hysteretic error of the sensor were 0.225 MHz/bar, 95.3%, 5.5%, and 6.2%, respectively.Entities:
Keywords: Alumina ceramic; High-temperature application; Pressure measurement; passive LC pressure sensor
Year: 2015 PMID: 26334279 PMCID: PMC4610600 DOI: 10.3390/s150921844
Source DB: PubMed Journal: Sensors (Basel) ISSN: 1424-8220 Impact factor: 3.576
Figure 1Proposed high-temperature pressure monitoring method in a practical application.
Figure 2(a) Wireless measurement principle; (b) Equivalent electric circuit.
Figure 3Design schematic of the (a) inductance and (b) capacitance elements of the sensor.
Geometric structural parameters of the sensor.
| Symbol | Parameters | Value |
|---|---|---|
| Inner diameter of the spiral inductor | ~8 mm | |
| Outer diameter of the spiral inductor | ~50 mm | |
| Number of turns of the inductor coil | 10 | |
| Side length of the capacitance plate | ~12 mm | |
| Height of the sealed cavity | 200 µm |
Figure 4Fabrication process.
Figure 5Sintering curve for the curing process of (a) the alumina ceramic substrates and (b) the electrical elements.
Figure 6Image of the (a) inductance and (b) capacitance of the sensor sample.
Figure 7Reader antenna.
Figure 8High-temperature pressure measurement system.
Figure 9Resonant frequency f0 and quality factor Q of the sensor as a function of temperature.
Figure 10Resonant frequencies of the sensor as a function of pressure at varying temperatures.
Figure 11Impedance (a) phase and (b) magnitude, in response to different pressures at 800 °C.
Figure 12The resonant frequency of the sensor as a function of pressure at 800 °C.