| Literature DB >> 26332896 |
David S Barth1, Christopher Gladden1, Alessandro Salandrino1, Kevin O'Brien1, Ziliang Ye1, Michael Mrejen1, Yuan Wang1, Xiang Zhang1,2,3,4.
Abstract
Photoelectrochemical etching of silicon can be used to form lateral refractive index gradients for transformation optical devices. This technique allows the fabrication of macroscale devices with large refractive index gradients. Patterned porous layers can also be lifted from the substrate and transferred to other materials, creating more possibilities for novel devices.Entities:
Keywords: gradient index optics; porous silicon; transformation optics, photochemical etching
Year: 2015 PMID: 26332896 DOI: 10.1002/adma.201502322
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849