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Literature DB >> 26331363

Resistive Switching Behavior in Organic-Inorganic Hybrid CH3 NH3 PbI3-x Clx Perovskite for Resistive Random Access Memory Devices.

Eun Ji Yoo^1,2, Miaoqiang Lyu², Jung-Ho Yun², Chi Jung Kang³, Young Jin Choi¹, Lianzhou Wang².

Abstract

The CH3 NH3 PbI3- x Clx organic-inorganic hybrid perovskite material demonstrates remarkable resistive switching behavior, which can be applicable in resistive random access memory devices. The simply designed Au/CH3 NH3 PbI3- x Clx /FTO structure is fabricated by a low-temperature, solution-processable method, which exhibits remarkable bipolar resistive switching and nonvolatile properties.

Entities: Chemical Gene

Keywords: nonvolatile memory; organic-inorganic hybrid perovskites; resistive switching

Year: 2015 PMID： 26331363 DOI： 10.1002/adma.201502889

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

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Cited

17 in total

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Authors: Yuan Wang; Min Hong; Jeffrey Venezuela; Ting Liu; Matthew Dargusch
Journal: Bioact Mater Date: 2022-10-11

2. Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory.

Authors: Jin Hyuck Heo; Dong Hee Shin; Sang Hwa Moon; Min Ho Lee; Do Hun Kim; Seol Hee Oh; William Jo; Sang Hyuk Im
Journal: Sci Rep Date: 2017-11-29 Impact factor: 4.379

3. Compact Layers of Hybrid Halide Perovskites Fabricated via the Aerosol Deposition Process-Uncoupling Material Synthesis and Layer Formation.

Authors: Fabian Panzer; Dominik Hanft; Tanaji P Gujar; Frank-Julian Kahle; Mukundan Thelakkat; Anna Köhler; Ralf Moos
Journal: Materials (Basel) Date: 2016-04-08 Impact factor: 3.623

Resistive Switching Behavior in Organic-Inorganic Hybrid CH3 NH3 PbI3-x Clx Perovskite for Resistive Random Access Memory Devices.

Review 1. Expedient secondary functions of flexible piezoelectrics for biomedical energy harvesting.

2. Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory.

3. Compact Layers of Hybrid Halide Perovskites Fabricated via the Aerosol Deposition Process-Uncoupling Material Synthesis and Layer Formation.

4. Hybrid Organic-Inorganic Perovskite Memory with Long-Term Stability in Air.

5. Effect of halide-mixing on the switching behaviors of organic-inorganic hybrid perovskite memory.

6. Micropatterned 2D Hybrid Perovskite Thin Films with Enhanced Photoluminescence Lifetimes.

Review 7. Status and Prospects of ZnO-Based Resistive Switching Memory Devices.

8. Memristive property's effects on the I-V characteristics of perovskite solar cells.

9. Perspective: Theory and simulation of hybrid halide perovskites.

10. Resistive Switching Property of Organic-Inorganic Tri-Cation Lead Iodide Perovskite Memory Device.