Literature DB >> 26322549

Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires.

Xing Dai1, Agnes Messanvi1,2,3, Hezhi Zhang1, Christophe Durand2,3, Joël Eymery2,3, Catherine Bougerol2,4, François H Julien1, Maria Tchernycheva1.   

Abstract

We demonstrate large area fully flexible blue LEDs based on core/shell InGaN/GaN nanowires grown by MOCVD. The fabrication relies on polymer encapsulation, nanowire lift-off and contacting using silver nanowire transparent electrodes. The LEDs exhibit rectifying behavior with a light-up voltage around 3 V. The devices show no electroluminescence degradation neither under multiple bending down to 3 mm curvature radius nor in time for more than one month storage in ambient conditions without any protecting encapsulation. Fully transparent flexible LEDs with high optical transmittance are also fabricated. Finally, a two-color flexible LED emitting in the green and blue spectral ranges is demonstrated combining two layers of InGaN/GaN nanowires with different In contents.

Entities:  

Keywords:  Nanowires; color-tunable emitters; flexible devices; light emitting diodes; nitrides; organic/inorganic hybrid devices

Year:  2015        PMID: 26322549     DOI: 10.1021/acs.nanolett.5b02900

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  18 in total

1.  Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates.

Authors:  Liliia Dvoretckaia; Vladislav Gridchin; Alexey Mozharov; Alina Maksimova; Anna Dragunova; Ivan Melnichenko; Dmitry Mitin; Alexandr Vinogradov; Ivan Mukhin; Georgy Cirlin
Journal:  Nanomaterials (Basel)       Date:  2022-06-10       Impact factor: 5.719

2.  Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode.

Authors:  Byung Oh Jung; Si-Young Bae; Seunga Lee; Sang Yun Kim; Jeong Yong Lee; Yoshio Honda; Hiroshi Amano
Journal:  Nanoscale Res Lett       Date:  2016-04-22       Impact factor: 4.703

3.  Horizontally assembled green InGaN nanorod LEDs: scalable polarized surface emitting LEDs using electric-field assisted assembly.

Authors:  Hoo Keun Park; Seong Woong Yoon; Yun Jae Eo; Won Woo Chung; Gang Yeol Yoo; Ji Hye Oh; Keyong Nam Lee; Woong Kim; Young Rag Do
Journal:  Sci Rep       Date:  2016-06-21       Impact factor: 4.379

Review 4.  Flexible inorganic light emitting diodes based on semiconductor nanowires.

Authors:  Nan Guan; Xing Dai; Andrey V Babichev; François H Julien; Maria Tchernycheva
Journal:  Chem Sci       Date:  2017-10-02       Impact factor: 9.825

5.  Near band gap luminescence in hybrid organic-inorganic structures based on sputtered GaN nanorods.

Authors:  Mathias Forsberg; Elena Alexandra Serban; Ching-Lien Hsiao; Muhammad Junaid; Jens Birch; Galia Pozina
Journal:  Sci Rep       Date:  2017-04-26       Impact factor: 4.379

6.  III-nitride core-shell nanorod array on quartz substrates.

Authors:  Si-Young Bae; Jung-Wook Min; Hyeong-Yong Hwang; Kaddour Lekhal; Ho-Jun Lee; Young-Dahl Jho; Dong-Seon Lee; Yong-Tak Lee; Nobuyuki Ikarashi; Yoshio Honda; Hiroshi Amano
Journal:  Sci Rep       Date:  2017-03-27       Impact factor: 4.379

7.  Stretchable Transparent Light-Emitting Diodes Based on InGaN/GaN Quantum Well Microwires and Carbon Nanotube Films.

Authors:  Fedor M Kochetkov; Vladimir Neplokh; Viktoria A Mastalieva; Sungat Mukhangali; Aleksandr A Vorob'ev; Aleksandr V Uvarov; Filipp E Komissarenko; Dmitry M Mitin; Akanksha Kapoor; Joel Eymery; Nuño Amador-Mendez; Christophe Durand; Dmitry Krasnikov; Albert G Nasibulin; Maria Tchernycheva; Ivan S Mukhin
Journal:  Nanomaterials (Basel)       Date:  2021-06-07       Impact factor: 5.076

8.  Flexible White Light Emitting Diodes Based on Nitride Nanowires and Nanophosphors.

Authors:  Nan Guan; Xing Dai; Agnès Messanvi; Hezhi Zhang; Jianchang Yan; Eric Gautier; Catherine Bougerol; François H Julien; Christophe Durand; Joël Eymery; Maria Tchernycheva
Journal:  ACS Photonics       Date:  2016-03-18       Impact factor: 7.529

9.  Flexible Photodiodes Based on Nitride Core/Shell p-n Junction Nanowires.

Authors:  Hezhi Zhang; Xing Dai; Nan Guan; Agnes Messanvi; Vladimir Neplokh; Valerio Piazza; Martin Vallo; Catherine Bougerol; François H Julien; Andrey Babichev; Nicolas Cavassilas; Marc Bescond; Fabienne Michelini; Martin Foldyna; Eric Gautier; Christophe Durand; Joël Eymery; Maria Tchernycheva
Journal:  ACS Appl Mater Interfaces       Date:  2016-09-23       Impact factor: 9.229

10.  Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy.

Authors:  Galia Pozina; Azat R Gubaydullin; Maxim I Mitrofanov; Mikhail A Kaliteevski; Iaroslav V Levitskii; Gleb V Voznyuk; Evgeniy E Tatarinov; Vadim P Evtikhiev; Sergey N Rodin; Vasily N Kaliteevskiy; Leonid S Chechurin
Journal:  Sci Rep       Date:  2018-05-08       Impact factor: 4.379

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