Sander A Mann1, Erik C Garnett1. 1. Center for Nanophotonics, FOM Institute AMOLF , Science Park Amsterdam 104, 1098 XG Amsterdam, The Netherlands.
Abstract
We present an approach to spectrum splitting for photovoltaics that utilizes the resonant optical properties of nanostructures for simultaneous voltage enhancement and spatial separation of different colors of light. Using metal-insulator-metal resonators commonly used in broadband metamaterial absorbers we show theoretically that output voltages can be enhanced significantly compared to single-junction devices. However, the approach is general and works for any type of resonator with a large absorption cross section. Due to its resonant nature, the spectrum splitting occurs within only a fraction of the wavelength, as opposed to traditional spectrum splitting methods, where many wavelengths are required. Combining nanophotonic spectrum splitting with other nanophotonic approaches to voltage enhancements, such as angle restriction and concentration, may lead to highly efficient but deeply subwavelength photovoltaic devices.
We present an approach to spectrum splitting for photovoltaics that utilizes the resonant optical properties of nanostructures for simultaneous voltage enhancement and spatial separation of different colors of light. Using metal-insulator-metal resonators commonly used in broadband metamaterial absorbers we show theoretically that output voltages can be enhanced significantly compared to single-junction devices. However, the approach is general and works for any type of resonator with a large absorption cross section. Due to its resonant nature, the spectrum splitting occurs within only a fraction of the wavelength, as opposed to traditional spectrum splitting methods, where many wavelengths are required. Combining nanophotonic spectrum splitting with other nanophotonic approaches to voltage enhancements, such as angle restriction and concentration, may lead to highly efficient but deeply subwavelength photovoltaic devices.
The conversion efficiency of
solar cells is an important factor in the cost per kWh, and improving
it has therefore been a key goal of photovoltaic research. For a single-junction
solar cell, such an efficiency enhancement can come from improving
the current or voltage output, or both. Nanophotonic engineering has
so far mostly been applied to solar cells with the goal of enhancing
the absorption and thereby current of a thin semiconductor layer.
This has been achieved using optical resonances in plasmonic[1] or dielectric structures.[2] By eliminating reflection and maximizing light trapping, such resonances
can bring the solar cell short-circuit current (Jsc) close to that expected under the Shockley–Queisser
limit.[3] More recently, interest has shifted
toward using nanophotonics to enhance the open-circuit voltage (Voc) of a solar cell.[4] In general, this is achieved when the recombination rate is reduced
with respect to the generation rate, resulting in higher carrier densities,
which correspond to a larger Fermi-level splitting and thus higher
output voltage.[5] Nanophotonic modification
of the recombination rate is possible via three different mechanisms:
optical concentration, angle restriction, and optical band gap engineering.
Optical concentration occurs when nanostructures act as antennas for
light. This means that on resonance, nanostructures absorb photons
from an area much larger than their physical cross section, leading
to lower material consumption and thus lower bulk recombination rates
without the need for focusing lenses or external optics.[6,7] Alternatively, for cells that are dominated by radiative recombination,
limiting the angles of emitted light through, for instance, a nanophotonic
multilayer structure[8,9] leads to photon recycling and
as a result to higher carrier concentrations.In addition to
intrinsic optical concentration and angle restriction,
nanophotonics can also be used to suppress absorption near a material’s
electronic band gap to create an effective photonic band gap that
is higher in energy.[10−13] This works because due to reciprocity, reducing absorption near
the band gap also makes it harder for carriers to recombine and emit
a photon to the far field. Instead, photons are recycled in bulk cells,[12] or the recombination rate is actually reduced
due to changes in the local density of optical states (LDOS).[13]Although this third approach increases
the voltage output of the
solar cell, the higher effective optical band gap also reduces the
maximum current; it therefore cannot lead to a power conversion efficiency
above the single-cell Shockley–Queisser (SQ) limit. The standard
method to exceed this limit is to build a solar cell where materials
with different band gaps are stacked on top of each other. This is
the multijunction solar cell concept, where a top cell absorbs only
high-energy photons, but transmits lower energy photons into the next
layer (see Figure a). In each subcell the thermalization losses are small, so the overall
conversion efficiency of photons is high. Efficiencies as high as
46% have been achieved using four different semiconductor layers that
are grown on top of each other epitaxially.[14] It has recently been shown theoretically that, with a two-layer
multijunction architecture as in Figure a, the single-junction SQ can actually be
surpassed even if both layers are made of the same material.[15] This is achieved by increasing the voltage output
of the top layer through photonic engineering, as described above.
Figure 1
Diagrams
depicting (a) the conventional tandem geometry, (b) a
conventional spectrum splitting approach based on spectrally selective
filters, and (c) nanophotonic spectrum splitting. In each case the
contacting scheme is shown as well, with (a) a series connection,
(b) each cell connected independently, and (c) a four-terminal connection
with a shared positive contact.
Although multijunction solar cells are a proven concept for high
efficiencies, their design and fabricaiton is complicated. Since the
standard multijunction solar cell is grown epitaxially, each layer
has to be lattice matched and produce the same current (which puts
constraints on the band gap). The difficulty involved in finding the
ideal combination of band gaps and lattice constants makes spectrum
splitting multijunctions—where the subcells are not placed
on top of each other but next to each other—quite appealing
(see Figure b).[16−18] This spectral splitting is typically done on macroscopic length
scales using external optics, such as dichroic mirrors.Just
as focusing optics can be replaced by nanoscale resonances
to provide optical concentration (as described above), nanostructures
also provide an opportunity for spectrum splitting without external
macroscopic optics. In this Letter we propose such an alternative
approach to spectrum splitting, where the resonant optical properties
of nanoparticles are responsible for both the voltage enhancement
(due to an increased optical band gap) and the actual spectrum splitting
(see Figure c). This
approach is based on the fact that nanoparticles can have very large
absorption cross sections and that sufficiently detuned resonators
operate independently, even if they are closely spaced. As opposed
to the approaches in Figure a and b, where colors are separated over distances of many
wavelengths, nanophotonic spectrum splitting occurs within a fraction
of the wavelength. As a result, the multijunction solar cell can have
a subwavelength height, significantly reducing material consumption.We begin by investigating an array of identical resonant particles,
to gauge the voltage enhancements that can be achieved through nanophotonic
manipulation of the band gap alone. We will then move on to an array
of detuned resonators in one unit cell, to investigate nanophotonic
spectrum splitting. Since the resonators are spatially separated,
we are not restricted to certain materials or lattice constants. Hence,
we will also look at nanophotonic spectrum splitting when resonators
are made from different semiconductors. Although in this study we
investigate metal–insulator–metal patch resonators,
the results are general and apply to any nanostructured resonator
with a large absorption cross section. We believe that this approach
to spectrum splitting facilitates further integration with other nanophotonic
concepts for voltage enhancements such as angle restriction[8,9] and, in the presence of nonradiative recombination, concentration.[6,7]Diagrams
depicting (a) the conventional tandem geometry, (b) a
conventional spectrum splitting approach based on spectrally selective
filters, and (c) nanophotonic spectrum splitting. In each case the
contacting scheme is shown as well, with (a) a series connection,
(b) each cell connected independently, and (c) a four-terminal connection
with a shared positive contact.Nanostructures, particularly at resonance, can have an absorption
cross section (Cabs) that is much larger
than their geometrical cross section (Cgeo):[19]where Qabs is
called the absorption efficiency. As a result, an array of identical
nanostructures with large spacing in between can still absorb all
of the incident light at the resonance wavelength.[20,21] An example of such an array is depicted in Figure a, where a small metal–insulator–metal
(MIM) resonator is shown in a 400 by 400 nm unit cell. The MIM configuration
supports so-called MIM waveguide modes, which reflect off the sides
of the disk and form a Fabry–Perot-like resonance.[22−24] In our case the metal substrate and top hat are silver (Ag) and
in between is a disk of aluminum gallium arsenide (Al0.3Ga0.7Sb). Using finite-difference time-domain (Lumerical
FDTD) we calculated the absorption in the semiconductor under normal
incidence illumination for a range of wavelengths and MIM disk diameters
(Figure b; see Figure S1 for full spectrum and total absorptance
including in silver). A strong absorption peak corresponding to the
fundamental MIM resonance is shown red-shifting and increasing in
intensity for larger diameters, until the peak amplitude starts to
decrease close to the band gap (1130 nm/1.1 eV[25]). This variation in amplitude is due to changes in the
absorption loss rate of the resonance, which depends on the extinction
coefficient of Al0.3Ga0.7Sb. Resonances absorb
most strongly when their radiative loss rate and absorption loss rate
are equal (the so-called critical coupling condition), and an increase
or decrease in the absorption loss rate reduces the peak amplitude.[26] The radiative loss rate of the MIM resonator
is low (its bandwidth is small), so counterintuitively it absorbs
most when the extinction coefficient is also low (close to the band
gap).
Figure 2
(a) Diagram of the MIM resonator array with a unit cell size of
400 by 400 nm. (b) Absorption spectrum of a periodic array of identical
MIM resonators, for different diameters d (see a).
(c) Voc of the MIM array (red), compared
to the Shockley–Queisser Voc for
a perfectly absorbing solar cell (dashed black) with the same band
gap. (d) Absorption spectrum of the MIM array for two diameters and
the blackbody spectrum at 300 K for unity emissivity in black.
(a) Diagram of the MIM resonator array with a unit cell size of
400 by 400 nm. (b) Absorption spectrum of a periodic array of identical
MIM resonators, for different diameters d (see a).
(c) Voc of the MIM array (red), compared
to the Shockley–Queisser Voc for
a perfectly absorbing solar cell (dashed black) with the same band
gap. (d) Absorption spectrum of the MIM array for two diameters and
the blackbody spectrum at 300 K for unity emissivity in black.If the absorptivity of a geometry
such as an array of nanostructures
is known over the whole range of the solar spectrum and all angles,
one can calculate the maximum open-circuit voltage (Voc) using the detailed balance framework:[11]where q is the electron charge, kB is the Boltzmann constant, T is the temperature
of the solar cell, and Jsc and J0 are the short-circuit
and reverse saturation current density, respectively. The Jsc is obtained simply by integrating the semiconductor
absorptance of the array under normal incidence and over the solar
spectrum (i.e., assuming 100% internal quantum efficiency), while
calculation of J0 is a little more involved.
In the dark a very small amount of carriers are generated because
of above band gap blackbody radiation, and in equilibrium the same
amount of carriers must recombine (the principle of detailed balance).[3,11]J0 can thus be found by integrating
the full hemisphere absorption spectrum over the blackbody spectrum
at ambient temperatures. This gives for Jsc and J0Here S(ω) is the AM1.5
solar spectrum,[27] and ψa is the blackbody spectrum at ambient temperatures (Ta = 300 K). A(ω,θ,ϕ)
is the unpolarized absorbtance of the total array in the semiconductor,
thus excluding absorption in silver, as a function of incident angle.
In eq the cos(θ)
term is due to Lambert’s cosine rule, and the sin(θ)
term accounts for the solid angle. We have assumed that the illumination
occurs only at normal incidence (eq ), which is a good approximation considering the small
solid angle occupied by the sun, while for recombination we integrate
over the full hemisphere (eq ). Furthermore, we have assumed that there is only radiative
recombination to the far-field. Finally, we have assumed that the
absorption is in fact isotropic (A(ω,θ,ϕ)
= A(ω)), which is a good assumption because,
due to the subwavelength lattice, the response is based on the single
MIM resonator[28] (see Supporting Information Figure S4).The Voc of this array, shown in red
in Figure c, varies
with diameters and for small diameters is significantly higher than
the regular Shockley–Queisser Voc (dashed black line). As the absorptance is isotropic, this voltage
enhancement is not due to angle restriction effects (see Supporting Information), but instead the origin
lies in the suppression of absorption near the band gap.[10−13] As thermal emission peaks near the band gap and then decays exponentially
for higher energies, moving a resonance to shorter wavelengths reduces J0 dramatically. For example, Figure d shows the absorption spectra
of 100 and 120 nm diameter MIM resonator arrays together with the
300 K blackbody spectrum. Because the integrated product of the 100
nm disk absorption and the blackbody spectrum is much smaller, the
equilibrium thermal emission is lower and the Voc is increased.Although voltages
are enhanced significantly, the absorption bandwidth
is small and, as a result, so is the current. However, because Qabs is large enough, this can leave ample room
to interdigitate a second (or third, fourth, etc.) array detuned from
the first to absorb strongly at another wavelength. This is the basic
principle of some broadband metamaterial absorbers, where it is used
to enhance the absorbing bandwidth of an array.[21,24,28−30] Since at different wavelengths
light is absorbed in physically different positions, this phenomenon
has also been suggested for photon sorting.[29,31] Photon sorting is exactly what is required in a multijunction solar
cell, where photons are directed to and absorbed in a subcell where
they are converted most efficiently. We can thus use the resonant
properties of these nanoscale resonators to simultaneously enhance
the voltage and split the spectrum.(a) Diagram of the MIM resonator array,
now with four resonators
in a unit cell. They are positioned equally far from each other (200
nm spacing between centers). (b) Absorption spectrum of this array,
where black is total absorption and shades of blue are the different
size resonators individually, excluding absorption in the silver.
(c) Field enhancement plots showing the electric field density at
different wavelengths corresponding to the resonant frequencies of
the different resonators. The scale bar is 100 nm. The plot depicts
the 400 by 400 nm xy-plane in the middle of the semiconductor
cylinder (z = 25 nm above the Ag substrate). Polarization
is along the y-axis in both b and c (other polarization
in Figure S2).To achieve nanophotonic spectrum splitting, we place multiple
detuned
resonators in the same subwavelength unit cell (see Figure a). The absorption spectrum
of the array is shown in Figure b, with, in solid black, the total absorption and,
in colors, the different semiconductor disks. The spectra over the
whole solar range for both polarizations are shown in Figure S2.
Figure 3
(a) Diagram of the MIM resonator array,
now with four resonators
in a unit cell. They are positioned equally far from each other (200
nm spacing between centers). (b) Absorption spectrum of this array,
where black is total absorption and shades of blue are the different
size resonators individually, excluding absorption in the silver.
(c) Field enhancement plots showing the electric field density at
different wavelengths corresponding to the resonant frequencies of
the different resonators. The scale bar is 100 nm. The plot depicts
the 400 by 400 nm xy-plane in the middle of the semiconductor
cylinder (z = 25 nm above the Ag substrate). Polarization
is along the y-axis in both b and c (other polarization
in Figure S2).
The absorption spectrum shows
that this geometry spatially separates
colors: at different wavelengths absorption peaks in different resonators
(total absorption reaches over 90% in three out of four resonators),
which are physically separated, without the need for external optics.
This is even more clearly visible in Figure c, where the electric field intensity enhancement
|E|2/|E0|2 is shown (E0 is the incident
field amplitude). The two plots correspond to the peak wavelengths
of the two larger resonators in Figure b. At the different wavelengths high-field intensities
are visible in the resonant nanostructures while the off-resonance
nanostructures remain dark, which visualizes how light is captured
and the spectrum is split by the resonators.Current–voltage
curves for the separate AlGaSb resonators
in Figure a.Using eq we can
calculate the open-circuit voltage and short circuit from each resonator
in the array. We can then calculate the J–V curve corresponding to each resonator, which is given
by the ideal diode equation (J(V) = Jsc – J0 exp(qV/kBT)[3,11]). From these curves, shown in Figure , it is clear that
again the Voc for each resonator has increased:
825, 880, 905, and 937 mV for the largest to smallest resonators,
respectively. This remarkable increase of more than 100 mV in the Voc (14%) using exactly the same material arises
only through careful engineering of the nanophotonic resonances. The
current of each resonator is relatively small due to the narrow bandwidth,
as mentioned above, which limits the efficiency. Although in the current
design this limits the total power conversion efficiency to 13.91%,
we can show that spectrum splitting does actually improve the efficiency
of the array by making two comparisons. First of all, if each resonator
in the array has the same size, the efficiency would be comparable
to the single resonator array discussed before. Due to significantly
lower currents, this efficiency is below 6% (see Supporting Information). Second, we can compare it to a configuration
where all resonators are connected in parallel. In that case the voltage
over each cell is equal, and the advantage of spectrum splitting is
lost. For the device in Figure a this leads to an efficiency of 13.41%, so spectrum splitting
has led to an increase in efficiency of almost 4%.
Figure 4
Current–voltage
curves for the separate AlGaSb resonators
in Figure a.
(a) Diagram of the MIM resonator array, now with four resonators
in a unit cell. Two resonators comprise AlGaSb as an absorber, one
InP and one AlGaAs. They are positioned equally far from each other
(200 nm spacing between centers). (b) Absorption spectrum of this
array, where black is total absorption and the colored curves show
absorption in the semiconductor material of the individual resonators,
excluding absorption in the silver (unmarked curves correspond to
the AlGaSb pair). Polarization is along the y-axis;
see Figure S3 for other polarization. (c)
Current–voltage curves for the four independent resonators
in part a.Although we have demonstrated
that nanophotonic spectrum splitting
can lead to a multijunction solar cell using only a single material
by proper resonance engineering, the improvement in efficiency is
still modest (4%). Further gains in Voc are possible by making the different resonators from materials with
different band gaps. Figure a shows a unit cell with two detuned Al0.3Ga0.7Sb resonators (band gap = 1.1 eV), one indium phosphide
(InP, band gap = 1.34 eV[25]), and one aluminum
gallium arsenide (Al0.2Ga0.8As, band gap = 1.67
eV[25]) resonator. The absorption spectrum
of the array is shown in Figure b, with absorption in each semiconductor disk shown
as a colored curve. Figure c shows the J–V curves
of the different resonators, and we immediately notice that higher Voc values are indeed achieved: the AlGaAs subcell
has a Voc of 1.39 V and the InP subcell
has a Voc of about 1.06 V. This enhanced
voltage compared to the AlGaSb resonators is due to the fact that
the AlGaAs and InP resonators naturally do not absorb at all below
their band gap, leading to a lower J0.
This increase in output voltage positively affects the efficiency:
it has increased by 27% from 13.91% for the AlGaSb array to 17.53%,
while the total Jsc has increased by only
12% to 20.3 mA/cm2. As with the AlGaSb array, the efficiency
is still limited by the generated current, due to the narrow-bandwidth
resonators. To increase the efficiency, the current has to be increased
by either including more resonators or using resonators with a larger
bandwidth. Ideally one would increase the number of narrow-band resonators
to keep thermalization losses as low as possible, but it may be more
practical to use larger bandwidth resonances or a nanostructure that
supports multiple resonances in the same frequency window.[26,32] Additionally, although current enhancements in plasmonic metal–semconductor
systems have been observed experimentally,[33,34] the presence of metal might lead to a reduction of the internal
quantum efficiency due to, for example, quenching of carriers. Purely
dielectric nanophotonic structures might therefore be more favorable
to achieve high internal quantum efficiencies and to avoid ohmic absorption
losses.
Figure 5
(a) Diagram of the MIM resonator array, now with four resonators
in a unit cell. Two resonators comprise AlGaSb as an absorber, one
InP and one AlGaAs. They are positioned equally far from each other
(200 nm spacing between centers). (b) Absorption spectrum of this
array, where black is total absorption and the colored curves show
absorption in the semiconductor material of the individual resonators,
excluding absorption in the silver (unmarked curves correspond to
the AlGaSb pair). Polarization is along the y-axis;
see Figure S3 for other polarization. (c)
Current–voltage curves for the four independent resonators
in part a.
To conclude, we have investigated
theoretically spectrum splitting
for photovoltaic applications utilizing arrays of nanoscale antennas
with different resonant frequencies. This allows for simultaneous
voltage enhancement and spatial separation of different colors of
light. Such an intrinsic spectrum-splitting mechanism relaxes the
lattice and current-matching requirements compared to the typical
multijunction solar cells, while also eliminating the need for external
splitting optics. Additionally, this was achieved in an array with
a deeply subwavelength height. Efficiency enhancements are observed
for a multijunction spectrum-splitting design that uses only a single
semiconductor due to suppression of absorption near the band gap in
some of the resonators, which leads to higher voltages. Much larger
efficiency enhancements are observed when the different resonators
are made from different semiconductors, due to the more stringent
reduction of reverse saturation currents that comes with increasing
electronic band gaps. The nanophotonic spectrum-splitting and voltage
enhancement approach presented here is general for any type of nanoscale
resonator, dielectric or plasmonic, and efficiencies can be enhanced
significantly by using larger bandwidth resonances while still maintaining
high optical cross sections. Combining nanophotonic spectrum splitting
with other nanophotonic approaches to voltage enhancements, such as
angle restriction and concentration, may lead to deeply subwavelength,
yet highly efficient photovoltaic devices with very low material consumption.
Authors: Sebastian Z Oener; Parisa Khoram; Sarah Brittman; Sander A Mann; Qianpeng Zhang; Zhiyong Fan; Shannon W Boettcher; Erik C Garnett Journal: Nano Lett Date: 2017-10-10 Impact factor: 11.189