| Literature DB >> 26315566 |
Antonija Grubišić Čabo1, Jill A Miwa1, Signe S Grønborg1, Jonathon M Riley2, Jens C Johannsen3, Cephise Cacho4, Oliver Alexander4, Richard T Chapman4, Emma Springate4, Marco Grioni3, Jeppe V Lauritsen1, Phil D C King2, Philip Hofmann1, Søren Ulstrup1.
Abstract
The dynamics of excited electrons and holes in single layer (SL) MoS2 have so far been difficult to disentangle from the excitons that dominate the optical response of this material. Here, we use time- and angle-resolved photoemission spectroscopy for a SL of MoS2 on a metallic substrate to directly measure the excited free carriers. This allows us to ascertain a direct quasiparticle band gap of 1.95 eV and determine an ultrafast (50 fs) extraction of excited free carriers via the metal in contact with the SL MoS2. This process is of key importance for optoelectronic applications that rely on separated free carriers rather than excitons.Entities:
Keywords: MoS2; Transition metal dichalcogenides; excitons; free carriers; time- and angle-resolved photoemission spectroscopy
Year: 2015 PMID： 26315566 DOI： 10.1021/acs.nanolett.5b01967
Source DB: PubMed Journal: Nano Lett ISSN： 1530-6984 Impact factor: 11.189