Literature DB >> 26308500

Complex Internal Bias Fields in Ferroelectric Hafnium Oxide.

Tony Schenk1, Michael Hoffmann1, Johannes Ocker1, Milan Pešić1, Thomas Mikolajick1,2, Uwe Schroeder1.   

Abstract

For the rather new hafnia- and zirconia-based ferroelectrics, a lot of questions are still unsettled. Among them is the electric field cycling behavior consisting of (1) wake-up, (2) fatigue, and (3) the recently discovered subcycling-induced split-up/merging effect of transient current peaks in a hysteresis measurement. In the present work, first-order reversal curves (FORCs) are applied to study the evolution of the switching and backswitching field distribution within the frame of the Preisach model for three different phenomena: (1) The pristine film contains two oppositely biased regions. These internal bias fields vanish during the wake-up cycling. (2) Fatigue as a decrease in the number of switchable domains is accompanied by a slight increase in the mean absolute value of the switching field. (3) The split-up effect is shown to also be related to local bias fields in a complex situation resulting from both the field cycling treatment and the measurement procedure. Moreover, the role of the wake-up phenomenon is discussed with respect to optimizing low-voltage operation conditions of ferroelectric memories toward reasonably high and stable remanent polarization and highest possible endurance.

Entities:  

Keywords:  electric field cycling behavior; ferroelectric; first-order reversal curves; hafnium oxide; internal bias fields

Year:  2015        PMID: 26308500     DOI: 10.1021/acsami.5b05773

Source DB:  PubMed          Journal:  ACS Appl Mater Interfaces        ISSN: 1944-8244            Impact factor:   9.229


  5 in total

1.  Influence of the Template Layer on the Structure and Ferroelectric Properties of PbZr0.52Ti0.48O3 Films.

Authors:  Philip Lucke; Mohammadreza Nematollahi; Muharrem Bayraktar; Andrey E Yakshin; Johan E Ten Elshof; Fred Bijkerk
Journal:  ACS Omega       Date:  2022-06-17

2.  Nanoscale Doping and Its Impact on the Ferroelectric and Piezoelectric Properties of Hf0.5Zr0.5O2.

Authors:  Anastasia Chouprik; Roman Kirtaev; Evgeny Korostylev; Vitalii Mikheev; Maxim Spiridonov; Dmitrii Negrov
Journal:  Nanomaterials (Basel)       Date:  2022-04-27       Impact factor: 5.719

3.  Improved Ferroelectric Properties in Hf0.5Zr0.5O2 Thin Films by Microwave Annealing.

Authors:  Biyao Zhao; Yunting Yan; Jinshun Bi; Gaobo Xu; Yannan Xu; Xueqin Yang; Linjie Fan; Mengxin Liu
Journal:  Nanomaterials (Basel)       Date:  2022-08-30       Impact factor: 5.719

4.  Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film.

Authors:  Yan Cheng; Zhaomeng Gao; Kun Hee Ye; Hyeon Woo Park; Yonghui Zheng; Yunzhe Zheng; Jianfeng Gao; Min Hyuk Park; Jung-Hae Choi; Kan-Hao Xue; Cheol Seong Hwang; Hangbing Lyu
Journal:  Nat Commun       Date:  2022-02-03       Impact factor: 14.919

5.  Si-Doped HfO2-Based Ferroelectric Tunnel Junctions with a Composite Energy Barrier for Non-Volatile Memory Applications.

Authors:  Yoseop Lee; Sungmun Song; Woori Ham; Seung-Eon Ahn
Journal:  Materials (Basel)       Date:  2022-03-18       Impact factor: 3.623

  5 in total

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