Literature DB >> 26302818

First realization of the piezoelectronic stress-based transduction device.

Josephine B Chang1, Hiroyuki Miyazoe, Matthew Copel, Paul M Solomon, Xiao-Hu Liu, Thomas M Shaw, Alejandro G Schrott, Lynne M Gignac, Glenn J Martyna, Dennis M Newns.   

Abstract

We present the first realization of a monolithically integrated piezoelectronic transistor (PET), a new transduction-based computer switch which could potentially operate conventional computer logic at 1/50 the power requirements of current Si-based transistors (Chen 2014 Proc. IEEE ICICDT pp 1-4; Mamaluy et al 2014 Proc. IWCE pp 1-2). In PET operation, an input gate voltage expands a piezoelectric element (PE), transducing the input into a pressure pulse which compresses a piezoresistive element (PR). The PR resistance goes down, transducing the signal back to voltage and turning the switch 'on'. This transduction physics, in principle, allows fast, low-voltage operation. In this work, we address the processing challenges of integrating chemically incompatible PR and PE materials together within a surrounding cage against which the PR can be compressed. This proof-of-concept demonstration of a fully integrated, stand-alone PET device is a key step in the development path toward a fast, low-power very large scale integration technology.

Entities:  

Year:  2015        PMID: 26302818     DOI: 10.1088/0957-4484/26/37/375201

Source DB:  PubMed          Journal:  Nanotechnology        ISSN: 0957-4484            Impact factor:   3.874


  1 in total

1.  SmS/EuS/SmS Tri-Layer Thin Films: The Role of Diffusion in the Pressure Triggered Semiconductor-Metal Transition.

Authors:  Andreas Sousanis; Dirk Poelman; Philippe F Smet
Journal:  Nanomaterials (Basel)       Date:  2019-10-24       Impact factor: 5.076

  1 in total

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