Literature DB >> 26296851

Tunable Polarity Behavior and Self-Driven Photoswitching in p-WSe₂/n-WS₂ Heterojunctions.

Nengjie Huo1, Juehan Yang1, Le Huang1, Zhongming Wei1, Shu-Shen Li1, Su-Huai Wei2, Jingbo Li1.   

Abstract

Van der Waals (vdW) p-n heterojunctions consisting of various 2D layer compounds are fascinating new artificial materials that can possess novel physics and functionalities enabling the next-generation of electronics and optoelectronics devices. Here, it is reported that the WSe2/WS2 p-n heterojunctions perform novel electrical transport properties such as distinct rectifying, ambipolar, and hysteresis characteristics. Intriguingly, the novel tunable polarity transition along a route of n-"anti-bipolar"-p-ambipolar is observed in the WSe2/WS2 heterojunctions owing to the successive work of conducting channels of junctions, p-WSe2 and n-WS2 on the electrical transport of the whole systems. The type-II band alignment obtained from first principle calculations and built-in potential in this vdW heterojunction can also facilitate the efficient electron-hole separation, thus enabling the significant photovoltaic effect and a much enhanced self-driven photoswitching response in this system.
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  photoswitching, WSe2/WS2 heterojunctions; photovoltaics; self-driven photoswitching; tunable polarity

Year:  2015        PMID: 26296851     DOI: 10.1002/smll.201501206

Source DB:  PubMed          Journal:  Small        ISSN: 1613-6810            Impact factor:   13.281


  8 in total

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4.  Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p-n junctions.

Authors:  Tiefeng Yang; Biyuan Zheng; Zhen Wang; Tao Xu; Chen Pan; Juan Zou; Xuehong Zhang; Zhaoyang Qi; Hongjun Liu; Yexin Feng; Weida Hu; Feng Miao; Litao Sun; Xiangfeng Duan; Anlian Pan
Journal:  Nat Commun       Date:  2017-12-04       Impact factor: 14.919

5.  Tuning Coupling Behavior of Stacked Heterostructures Based on MoS2, WS2, and WSe2.

Authors:  Fang Wang; Junyong Wang; Shuang Guo; Jinzhong Zhang; Zhigao Hu; Junhao Chu
Journal:  Sci Rep       Date:  2017-03-17       Impact factor: 4.379

6.  A comparative study of electrical and opto-electrical properties of a few-layer p-WSe2/n-WS2 heterojunction diode on SiO2 and h-BN substrates.

Authors:  Pradeep Raj Sharma; Praveen Gautam; Amir Muhammad Afzal; Byoungchoo Park; Hwayong Noh
Journal:  RSC Adv       Date:  2021-05-18       Impact factor: 4.036

7.  Effect of interfacial defects on the electronic properties of graphene/g-GaN heterostructures.

Authors:  Zhongxun Deng; Xianhui Wang; Jie Cui
Journal:  RSC Adv       Date:  2019-05-01       Impact factor: 4.036

8.  Interface-Induced WSe2 In-plane Homojunction for High-Performance Photodetection.

Authors:  Jiawei Chi; Nan Guo; Yue Sun; Guohua Li; Lin Xiao
Journal:  Nanoscale Res Lett       Date:  2020-05-14       Impact factor: 4.703

  8 in total

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