| Literature DB >> 26295748 |
Zhen Zhu1, Jie Guan1, David Tománek1.
Abstract
As a way to further improve the electronic properties of group V layered semiconductors, we propose to form in-layer 2D heterostructures of black phosphorus and gray arsenic. We use ab initio density functional theory to optimize the geometry, determine the electronic structure, and identify the most stable allotropes as a function of composition. Because pure black phosphorus and pure gray arsenic monolayers differ in their equilibrium structure, we predict a structural transition and a change in frontier states, including a change from a direct-gap to an indirect-gap semiconductor, with changing composition.Entities:
Keywords: ab initio; arsenene; compound; electronic band structure; phosphorene; structural phase transition
Year: 2015 PMID: 26295748 DOI: 10.1021/acs.nanolett.5b02227
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189