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Literature DB >> 26293986

A Van Der Waals Homojunction: Ideal p-n Diode Behavior in MoSe2.

Youngjo Jin^1,2, Dong Hoon Keum^1,2, Sung-Jin An^1,2, Joonggyu Kim^1,2, Hyun Seok Lee¹, Young Hee Lee^1,2,3.

Abstract

A MoSe2 p-n diode with a van der Waals homojunction is demonstrated by stacking undoped (n-type) and Nb-doped (p-type) semiconducting MoSe2 synthesized by chemical vapor transport for Nb substitutional doping. The p-n diode reveals an ideality factor of ≈1.0 and a high external quantum efficiency (≈52%), which increases in response to light intensity due to the negligible recombination rate at the clean homojunction interface.

Keywords: elemental doping; p-n diodes; p-type MoSe2; transition metal dichalcogenides; van der Waals homojunction

Year: 2015 PMID： 26293986 DOI： 10.1002/adma.201502278

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

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