Literature DB >> 26284305

High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics.

Ning Han1, Zai-xing Yang2, Fengyun Wang3, Guofa Dong2, SenPo Yip2, Xiaoguang Liang, Tak Fu Hung, Yunfa Chen1, Johnny C Ho2.   

Abstract

Among many available photovoltaic technologies at present, gallium arsenide (GaAs) is one of the recognized leaders for performance and reliability; however, it is still a great challenge to achieve cost-effective GaAs solar cells for smart systems such as transparent and flexible photovoltaics. In this study, highly crystalline long GaAs nanowires (NWs) with minimal crystal defects are synthesized economically by chemical vapor deposition and configured into novel Schottky photovoltaic structures by simply using asymmetric Au-Al contacts. Without any doping profiles such as p-n junction and complicated coaxial junction structures, the single NW Schottky device shows a record high apparent energy conversion efficiency of 16% under air mass 1.5 global illumination by normalizing to the projection area of the NW. The corresponding photovoltaic output can be further enhanced by connecting individual cells in series and in parallel as well as by fabricating NW array solar cells via contact printing showing an overall efficiency of 1.6%. Importantly, these Schottky cells can be easily integrated on the glass and plastic substrates for transparent and flexible photovoltaics, which explicitly demonstrate the outstanding versatility and promising perspective of these GaAs NW Schottky photovoltaics for next-generation smart solar energy harvesting devices.

Entities:  

Keywords:  GaAs nanowires; Schottky contact; output reinforcement; photovoltaics; transparent and flexible solar cells

Year:  2015        PMID: 26284305     DOI: 10.1021/acsami.5b06452

Source DB:  PubMed          Journal:  ACS Appl Mater Interfaces        ISSN: 1944-8244            Impact factor:   9.229


  5 in total

1.  CuInSe2 nanotube arrays for efficient solar energy conversion.

Authors:  Wipula Priya Rasika Liyanage; Manashi Nath
Journal:  Sci Rep       Date:  2019-11-14       Impact factor: 4.379

2.  Analysis and design of InAs nanowire array based ultra broadband perfect absorber.

Authors:  Mohammad Muntasir Hassan; Fariba Islam; Md Zunaid Baten; Samia Subrina
Journal:  RSC Adv       Date:  2021-11-23       Impact factor: 4.036

3.  Benchtop Electrochemical Growth and Controlled Alloying of Polycrystalline In x Ga1-x As Thin Films.

Authors:  Zachary R Lindsey; Malachi West; Peter Jacobson; John Robert Ray
Journal:  Cryst Growth Des       Date:  2022-06-07       Impact factor: 4.010

4.  Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD Method.

Authors:  Ying Wang; Zaixing Yang; Xiaofeng Wu; Ning Han; Hanyu Liu; Shuobo Wang; Jun Li; WaiMan Tse; SenPo Yip; Yunfa Chen; Johnny C Ho
Journal:  Nanoscale Res Lett       Date:  2016-04-12       Impact factor: 4.703

5.  Diameter Dependence of Planar Defects in InP Nanowires.

Authors:  Fengyun Wang; Chao Wang; Yiqian Wang; Minghuan Zhang; Zhenlian Han; SenPo Yip; Lifan Shen; Ning Han; Edwin Y B Pun; Johnny C Ho
Journal:  Sci Rep       Date:  2016-09-12       Impact factor: 4.379

  5 in total

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