| Literature DB >> 26283107 |
Sybren Ten Cate1, Yao Liu2, C S Suchand Sandeep1, Sachin Kinge, Arjan J Houtepen1, Tom J Savenije1, Juleon M Schins1, Matt Law2, Laurens D A Siebbeles1.
Abstract
Carrier multiplication-the generation of multiple electron-hole pairs by a single photon-is currently of great interest for the development of highly efficient photovoltaics. We study the effects of infilling PbSe quantum-dot solids with metal oxides by atomic layer deposition on carrier multiplication. Using time-resolved microwave conductivity measurements, we find, for the first time, that carrier multiplication occurs in 1,2-ethanedithiol-linked PbSe quantum-dot solids infilled with Al2O3 or Al2O3/ZnO, while it is negligible or absent in noninfilled films. The carrier-multiplication efficiency of the infilled quantum-dot solids is close to that of solution-dispersed PbSe quantum dots, and not significantly limited by Auger recombination.Entities:
Keywords: atomic layer deposition; carrier multiplication; multiple exciton generation; quantum dot solid; third-generation solar cell; time-resolved microwave conductivity
Year: 2013 PMID： 26283107 DOI： 10.1021/jz4007492
Source DB: PubMed Journal: J Phys Chem Lett ISSN： 1948-7185 Impact factor: 6.475