| Literature DB >> 26282308 |
Mauricio Solis de la Fuente1, Rafael S Sánchez2, Victoria González-Pedro2, Pablo P Boix3, S G Mhaisalkar3, Marina E Rincón1, Juan Bisquert2, Iván Mora-Seró2.
Abstract
The effect of semiconductor passivation on quantum-dot-sensitized solar cells (QDSCs) has been systematically characterized for CdS and CdS/ZnS. We have found that passivation strongly depends on the passivation agent, obtaining an enhancement of the solar cell efficiency for compounds containing amine and thiol groups and, in contrast, a decrease in performance for passivating agents with acid groups. Passivation can induce a change in the position of TiO2 conduction band and also in the recombination rate and nature, reflected in a change in the β parameter. Especially interesting is the finding that β, and consequently the fill factor can be increased with the passivation treatment. Applying this strategy, record cells of 4.65% efficiency for PbS-based QDSCs have been produced.Entities:
Keywords: passivation; quantum dots; sensitized solar cells
Year: 2013 PMID: 26282308 DOI: 10.1021/jz400626r
Source DB: PubMed Journal: J Phys Chem Lett ISSN: 1948-7185 Impact factor: 6.475