Literature DB >> 26282027

No Graphene Etching in Purified Hydrogen.

Saman Choubak1, Maxime Biron1, Pierre L Levesque2, Richard Martel2, Patrick Desjardins1.   

Abstract

A systematic study has been conducted to investigate the role of hydrogen in the etching reaction of graphene films grown on copper foils. The results at 825 °C and 500 mTorr showed no evidence of graphene etching by purified ultrahigh purity (UHP)-grade hydrogen, whereas graphene films exposed to unpurified UHP-grade hydrogen were considerably etched due to the presence of oxygen or other oxidizing impurities. This finding reveals not only the major impact of oxidizing impurities in the graphene etching reaction, but also entails understanding and controlling the graphene chemical vapor deposition mechanism on copper substrates.

Entities:  

Keywords:  CVD growth; carbon removal; copper; methane; oxidizing impurities; oxygen

Year:  2013        PMID： 26282027     DOI： 10.1021/jz400400u

Source DB:  PubMed          Journal:  J Phys Chem Lett        ISSN： 1948-7185            Impact factor:   6.475


  6 in total

1.  Two-component structural phase-field crystal models for graphene symmetries.

Authors:  K L M Elder; M Seymour; M Lee; M Hilke; N Provatas
Journal:  Philos Trans A Math Phys Eng Sci       Date:  2018-02-28       Impact factor: 4.226

2.  Continuous growth of hexagonal graphene and boron nitride in-plane heterostructures by atmospheric pressure chemical vapor deposition.

Authors:  Gang Hee Han; Julio A Rodríguez-Manzo; Chan-Woo Lee; Nicholas J Kybert; Mitchell B Lerner; Zhengqing John Qi; Eric N Dattoli; Andrew M Rappe; Marija Drndic; A T Charlie Johnson
Journal:  ACS Nano       Date:  2013-11-13       Impact factor: 15.881

3.  Realization of continuous Zachariasen carbon monolayer.

Authors:  Won-Jae Joo; Jae-Hyun Lee; Yamujin Jang; Seog-Gyun Kang; Young-Nam Kwon; Jaegwan Chung; Sangyeob Lee; Changhyun Kim; Tae-Hoon Kim; Cheol-Woong Yang; Un Jeong Kim; Byoung Lyong Choi; Dongmok Whang; Sung-Woo Hwang
Journal:  Sci Adv       Date:  2017-02-10       Impact factor: 14.136

4.  Growth Mechanism for Low Temperature PVD Graphene Synthesis on Copper Using Amorphous Carbon.

Authors:  Udit Narula; Cher Ming Tan; Chao Sung Lai
Journal:  Sci Rep       Date:  2017-03-09       Impact factor: 4.379

5.  On the Dynamics of Intrinsic Carbon in Copper during the Annealing Phase of Chemical Vapor Deposition Growth of Graphene.

Authors:  M Hadi Khaksaran; Ismet I Kaya
Journal:  ACS Omega       Date:  2019-06-03

6.  Low-temperature-grown continuous graphene films from benzene by chemical vapor deposition at ambient pressure.

Authors:  Jisu Jang; Myungwoo Son; Sunki Chung; Kihyeun Kim; Chunhum Cho; Byoung Hun Lee; Moon-Ho Ham
Journal:  Sci Rep       Date:  2015-12-10       Impact factor: 4.379
  6 in total

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