Literature DB >> 26278950

Microalloying Boron Carbide with Silicon to Achieve Dramatically Improved Ductility.

Qi An1, William A Goddard1.   

Abstract

Boron carbide (B4C) is a hard material whose value for extended engineering applications such as body armor; is limited by its brittleness under impact. To improve the ductility while retaining hardness, we used density functional theory to examine modifying B4C ductility through microalloying. We found that replacing the CBC chain in B4C with Si-Si, denoted as (B11Cp)-Si2, dramatically improves the ductility, allowing a continuous shear to a large strain of 0.802 (about twice of B4C failure strain) without brittle failure. Moreover, (B11C)-Si2 retains low density and high hardness. This ductility improvement arises because the Si-Si linkages enable the icosahedra accommodate additional shear by rotating instead of breaking bonds.

Entities:  

Keywords:  DFT; boron carbide; ductility; mechanical properties; microalloying

Year:  2014        PMID: 26278950     DOI: 10.1021/jz5022697

Source DB:  PubMed          Journal:  J Phys Chem Lett        ISSN: 1948-7185            Impact factor:   6.475


  2 in total

1.  Mysterious SiB3: Identifying the Relation between α- and β-SiB3.

Authors:  Daniel Eklöf; Andreas Fischer; Annop Ektarawong; Aleksander Jaworski; Andrew J Pell; Jekabs Grins; Sergei I Simak; Björn Alling; Yang Wu; Michael Widom; Wolfgang Scherer; Ulrich Häussermann
Journal:  ACS Omega       Date:  2019-11-01

2.  Tuning the deformation mechanisms of boron carbide via silicon doping.

Authors:  Sisi Xiang; Luoning Ma; Bruce Yang; Yvonne Dieudonne; George M Pharr; Jing Lu; Digvijay Yadav; Chawon Hwang; Jerry C LaSalvia; Richard A Haber; Kevin J Hemker; Kelvin Y Xie
Journal:  Sci Adv       Date:  2019-10-25       Impact factor: 14.136

  2 in total

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