| Literature DB >> 26230816 |
Fanming Qu1, Arjan J A Beukman1, Stevan Nadj-Perge1, Michael Wimmer1, Binh-Minh Nguyen2, Wei Yi2, Jacob Thorp2, Marko Sokolich2, Andrey A Kiselev2, Michael J Manfra3, Charles M Marcus4, Leo P Kouwenhoven1.
Abstract
Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double quantum wells (DQWs) have a unique double-layered structure with electron and hole gases separated in two layers, which enables tuning of the band alignment via electric and magnetic fields. However, the rich trivial-topological phase diagram has yet to be experimentally explored. We present an in situ and continuous tuning between the trivial and topological insulating phases in InAs/GaSb DQWs through electrical dual gating. Furthermore, we show that an in-plane magnetic field shifts the electron and hole bands relatively to each other in momentum space, functioning as a powerful tool to discriminate between the topologically distinct states.Year: 2015 PMID: 26230816 DOI: 10.1103/PhysRevLett.115.036803
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161