| Literature DB >> 26230363 |
Håkon Ikaros T Hauge1, Marcel A Verheijen1,2, Sonia Conesa-Boj3, Tanja Etzelstorfer4, Marc Watzinger4, Dominik Kriegner5, Ilaria Zardo1, Claudia Fasolato6,7, Francesco Capitani6, Paolo Postorino6,7, Sebastian Kölling1, Ang Li1, Simone Assali1, Julian Stangl4, Erik P A M Bakkers1,3.
Abstract
Silicon, arguably the most important technological semiconductor, is predicted to exhibit a range of new and interesting properties when grown in the hexagonal crystal structure. To obtain pure hexagonal silicon is a great challenge because it naturally crystallizes in the cubic structure. Here, we demonstrate the fabrication of pure and stable hexagonal silicon evidenced by structural characterization. In our approach, we transfer the hexagonal crystal structure from a template hexagonal gallium phosphide nanowire to an epitaxially grown silicon shell, such that hexagonal silicon is formed. The typical ABABAB... stacking of the hexagonal structure is shown by aberration-corrected imaging in transmission electron microscopy. In addition, X-ray diffraction measurements show the high crystalline purity of the material. We show that this material is stable up to 9 GPa pressure. With this development, we open the way for exploring its optical, electrical, superconducting, and mechanical properties.Entities:
Keywords: Core/Shell Nanowire; Hexagonal Crystal Structure; Raman Spectroscopy; Silicon; Single-Crystalline; X-ray Diffraction
Year: 2015 PMID: 26230363 DOI: 10.1021/acs.nanolett.5b01939
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189