| Literature DB >> 26222769 |
Hong Rak Choi1, Senthil Kumar Eswaran1, Seung Min Lee1, Yong Soo Cho1.
Abstract
Improving the fracture resistance of inorganic thin films is one of the key challenges in flexible electronic devices. A nonconventional in situ sputtering method is introduced to induce residual compressive stress in ZnO:Al thin films during deposition on a bent polymer substrate. The films grown under a larger prebending strain resulted in a higher fracture resistance to applied strains by exhibiting a ∼ 70% improvement in crack-initiating critical strain compared with the reference sample grown without bending. This significant improvement is attributed to the induced residual stress, which helps to prevent the formation of cracks by counteracting the applied strain.Entities:
Keywords: ZnO thin films; crack density; flexible electronics; fracture energy; transparent conducting oxide
Year: 2015 PMID: 26222769 DOI: 10.1021/acsami.5b04727
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229