Literature DB >> 26207508

Comment on "Determination of the Nitrogen Vacancy as a Shallow Compensating Center in GaN Doped with Divalent Metals".

D O Demchenko1, M A Reshchikov1.   

Abstract

Entities:  

Year:  2015        PMID： 26207508     DOI： 10.1103/PhysRevLett.115.029701

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


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  2 in total

1.  Polarization Enhanced Charge Transfer: Dual-Band GaN-Based Plasmonic Photodetector.

Authors:  Ran Jia; Dongfang Zhao; Naikun Gao; Duo Liu
Journal:  Sci Rep       Date:  2017-01-13       Impact factor: 4.379

2.  The marvelous optical performance of AlGaN-based deep ultraviolet light-emitting diodes with AlInGaN-based last quantum barrier and step electron blocking layer.

Authors:  Tariq Jamil; Muhammad Usman; Shahzeb Malik; Habibullah Jamal
Journal:  Appl Phys A Mater Sci Process       Date:  2021-05-04       Impact factor: 2.584
  2 in total

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