Literature DB >> 26193454

Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament.

Jui-Yuan Chen1, Chun-Wei Huang1, Chung-Hua Chiu1, Yu-Ting Huang1, Wen-Wei Wu1.   

Abstract

The filament in aAu/Ta2 O5 /Au system is analyzed and determined to be a nanoscaled TaO2-x filament. A shrunken anode localizes the filament formation and the defect boundary leads to faster accumulation of oxygen vacancies. The defect changes the switching domination between electron transport and oxygen-vacancy migration. The migration of oxygen vacancies limits the filament dynamics, indicating the crucial role played by oxygen defects.
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  in situ TEM; memristors; nanofilaments; resistive switching; valence change memories (VCM)

Year:  2015        PMID： 26193454     DOI： 10.1002/adma.201502758

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  14 in total

1.  Configurable switching behavior in polymer-based resistive memories by adopting unique electrode/electrolyte arrangement.

Authors:  Karthik Krishnan; Shaikh Mohammad Tauquir; Saranyan Vijayaraghavan; Ramesh Mohan
Journal:  RSC Adv       Date:  2021-07-02       Impact factor: 4.036

2.  Bottom-up synthesis of ordered metal/oxide/metal nanodots on substrates for nanoscale resistive switching memory.

Authors:  Un-Bin Han; Jang-Sik Lee
Journal:  Sci Rep       Date:  2016-05-09       Impact factor: 4.379

3.  Electronic Conduction in Ti/Poly-TiO2/Ti Structures.

Authors:  Faramarz Hossein-Babaei; Navid Alaei-Sheini
Journal:  Sci Rep       Date:  2016-07-12       Impact factor: 4.379

4.  Probing nanoscale oxygen ion motion in memristive systems.

Authors:  Yuchao Yang; Xiaoxian Zhang; Liang Qin; Qibin Zeng; Xiaohui Qiu; Ru Huang
Journal:  Nat Commun       Date:  2017-05-04       Impact factor: 14.919

5.  Interfacial chemical bonding-mediated ionic resistive switching.

Authors:  Hyeongjoo Moon; Vishal Zade; Hung-Sen Kang; Jin-Woo Han; Eunseok Lee; Cheol Seong Hwang; Min Hwan Lee
Journal:  Sci Rep       Date:  2017-04-28       Impact factor: 4.379

6.  Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM.

Authors:  Lei Zhang; Liang Zhu; Xiaomei Li; Zhi Xu; Wenlong Wang; Xuedong Bai
Journal:  Sci Rep       Date:  2017-03-21       Impact factor: 4.379

7.  Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique.

Authors:  Chi-Chang Wu; Hsin-Chiang You; Yu-Hsien Lin; Chia-Jung Yang; Yu-Ping Hsiao; Tun-Po Liao; Wen-Luh Yang
Journal:  Materials (Basel)       Date:  2018-02-09       Impact factor: 3.623

8.  High-efficiency large-area perovskite photovoltaic modules achieved via electrochemically assembled metal-filamentary nanoelectrodes.

Authors:  Soonil Hong; Jinho Lee; Hongkyu Kang; Geunjin Kim; Seyoung Kee; Jong-Hoon Lee; Suhyun Jung; Byoungwook Park; Seok Kim; Hyungcheol Back; Kilho Yu; Kwanghee Lee
Journal:  Sci Adv       Date:  2018-08-17       Impact factor: 14.136

9.  Investigation and Manipulation of Different Analog Behaviors of Memristor as Electronic Synapse for Neuromorphic Applications.

Authors:  Changhong Wang; Wei He; Yi Tong; Rong Zhao
Journal:  Sci Rep       Date:  2016-03-14       Impact factor: 4.379

10.  Flexible three-dimensional artificial synapse networks with correlated learning and trainable memory capability.

Authors:  Chaoxing Wu; Tae Whan Kim; Hwan Young Choi; Dmitri B Strukov; J Joshua Yang
Journal:  Nat Commun       Date:  2017-09-29       Impact factor: 14.919
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