| Literature DB >> 26192330 |
Xianglin Li1, Prince Saurabh Bassi2, Pablo P Boix1, Yanan Fang1, Lydia Helena Wong1,2.
Abstract
Ultrathin TiO2 is deposited on conventional hydrothermal grown hematite nanorod arrays by atomic layer deposition (ALD). Significant photoelectrochemical water oxidation performance improvement is observed when the ALD TiO2-treated samples are annealed at 650 °C or higher temperatures. The electrochemical impedance spectroscopy (EIS) study shows a surface trap-mediated charge transfer process exists at the hematite-electrolyte interface. Thus, one possible reason for the improvement could be the increased surface states at the hematite surface, which leads to better charge separation, less electron-hole recombination, and hence, greater improvement of photocurrent. Our Raman study shows the increase in surface defects on the ALD TiO2-coated hematite sample after being annealed at 650 °C or higher temperatures. A photocurrent of 1.9 mA cm(-2) at 1.23 V (vs RHE) with a maximum of 2.5 mA cm(-2) at 1.8 V (vs RHE) in 1 M NaOH under AM 1.5 simulated solar illumination is achieved in optimized deposition and annealing conditions.Entities:
Keywords: TiO2; atomic layer deposition (ALD); hematite; nanorods; photoelectrochemical cells (PEC); surface treatment
Year: 2015 PMID: 26192330 DOI: 10.1021/acsami.5b01394
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229