| Literature DB >> 26178149 |
Taishi Chen1,2, Wenqing Liu1,3,4, Fubao Zheng5, Ming Gao1,3, Xingchen Pan1,2, Gerrit van der Laan6, Xuefeng Wang1,3, Qinfang Zhang5, Fengqi Song1,2, Baigeng Wang1,2, Baolin Wang5, Yongbing Xu1,3,4, Guanghou Wang1,2, Rong Zhang1,3.
Abstract
High-mobility (Smx Bi1-x )2 Se3 topological insulators (with x = 0.05) show a Curie temperature of about 52 K, and the carrier concentration and Fermi wave vector can be manipulated by intentional Te introduction with no significant influence on the Curie temperature. The origin of the ferromagnetism is attributed to the trivalent Sm dopant, as confirmed by X-ray magnetic circular dichroism and first-principles calculations. The carrier concentration is on the order of 10(19) cm(-3) and the mobility can reach about 7200 cm(2) V(-1) s(-1) with pronounced Shubnikov-de Haas oscillations.Keywords: X-ray magnetic circular dichroism (XMCD); dilute magnetic semiconductors; ferromagnetism; magnetic doping; topological insulators
Year: 2015 PMID： 26178149 DOI： 10.1002/adma.201501254
Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849