Literature DB >> 26171950

Theory of Half-Space Light Absorption Enhancement for Leaky Mode Resonant Nanowires.

Yiming Jia1, Min Qiu2, Hui Wu3, Yi Cui4, Shanhui Fan5, Zhichao Ruan1.   

Abstract

Semiconductor nanowires supporting leaky mode resonances have been used to increase light absorption in optoelectronic applications from solar cell to photodetector and sensor. The light conventionally illuminates these devices with a wide range of different incident angles from half space. Currently, most of the investigated nanowires have centrosymmetric geometry cross section, such as circle, hexagon, and rectangle. Here we show that the absorption capability of these symmetrical nanowires has an upper limit under the half-space illumination. Based on the temporal coupled-mode equation, we develop a reciprocity theory for leaky mode resonances in order to connect the angle-dependent absorption cross section and the radiation pattern. We show that in order to exceed such a half-space limit the radiation pattern should be noncentrosymmetric and dominate in the direction reciprocal to the illumination. As an example, we design a metal trough structure to achieve the desired radiation pattern for an embedded nanowire. In comparison to a single nanowire case the trough structure indeed overcomes the half-space limit and leads to 39% and 64% absorption enhancement in TM and TE polarizations, respectively. Also the trough structure enables the enhancement over a broad wavelength range.

Entities:  

Keywords:  Nanowire; absorption; coupled-mode theory; leaky mode resonance; photodetector; solar cell

Year:  2015        PMID: 26171950     DOI: 10.1021/acs.nanolett.5b02044

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  2 in total

1.  Enhanced Photoelectrical Response of Hydrogenated Amorphous Silicon Single-Nanowire Solar Cells by Front-Opening Crescent Design.

Authors:  Zhenhai Yang; Guoyang Cao; Aixue Shang; Dang Yuan Lei; Cheng Zhang; Pingqi Gao; Jichun Ye; Xiaofeng Li
Journal:  Nanoscale Res Lett       Date:  2016-04-29       Impact factor: 4.703

2.  Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon.

Authors:  Wai Son Ko; Indrasen Bhattacharya; Thai-Truong D Tran; Kar Wei Ng; Stephen Adair Gerke; Connie Chang-Hasnain
Journal:  Sci Rep       Date:  2016-09-23       Impact factor: 4.379

  2 in total

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