Literature DB >> 26126213

1/f Noise Scaling Analysis in Unipolar-Type Organic Nanocomposite Resistive Memory.

Younggul Song1, Hyunhak Jeong1, Jingon Jang1, Tae-Young Kim1, Daekyoung Yoo1, Youngrok Kim1, Heejun Jeong2, Takhee Lee1.   

Abstract

We studied noise characteristics of a nanocomposite of polyimide (PI) and phenyl-C61-butyric acid methyl ester (PCBM) (denoted as PI:PCBM), a composite for the organic nonvolatile resistive memory material. The current fluctuations were investigated over a bias range that covers various intermediate resistive states and negative differential resistance (NDR) in organic nanocomposite unipolar resistive memory devices. From the analysis of the 1/f(γ) type noises, scaling behavior between the relative noise power spectral density S̃ and resistance R was observed, indicating a percolating behavior. Considering a linear rate equation of the charge trapping-detrapping at traps, the percolation behavior and NDR could be understood by the modulation of the conductive phase fraction φ with an external bias. This study can enhance the understanding of the NDR phenomena in organic nanocomposite unipolar resistive memory devices in terms of the current path formation and the memory switching.

Entities:  

Keywords:  noise characterization; organic memory; organic nanocomposite; percolation; unipolar resistive memory

Year:  2015        PMID: 26126213     DOI: 10.1021/acsnano.5b03168

Source DB:  PubMed          Journal:  ACS Nano        ISSN: 1936-0851            Impact factor:   15.881


  1 in total

1.  Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices.

Authors:  Younggul Song; Hyunhak Jeong; Seungjun Chung; Geun Ho Ahn; Tae-Young Kim; Jingon Jang; Daekyoung Yoo; Heejun Jeong; Ali Javey; Takhee Lee
Journal:  Sci Rep       Date:  2016-09-23       Impact factor: 4.379

  1 in total

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