| Literature DB >> 26111734 |
John O'Connell1,2,3, Giuseppe Alessio Verni1,2,3, Anushka Gangnaik1,2,3, Maryam Shayesteh2, Brenda Long1,2,3, Yordan M Georgiev1,2,3, Nikolay Petkov1,2,3, Gerard P McGlacken1,4, Michael A Morris1,2,3, Ray Duffy2, Justin D Holmes1,2,3.
Abstract
This article describes for the first time the controlled monolayer doping (MLD) of bulk and nanostructured crystalline silicon with As at concentrations approaching 2 × 10(20) atoms cm(-3). Characterization of doped structures after the MLD process confirmed that they remained defect- and damage-free, with no indication of increased roughness or a change in morphology. Electrical characterization of the doped substrates and nanowire test structures allowed determination of resistivity, sheet resistance, and active doping levels. Extremely high As-doped Si substrates and nanowire devices could be obtained and controlled using specific capping and annealing steps. Significantly, the As-doped nanowires exhibited resistances several orders of magnitude lower than the predoped materials.Entities:
Keywords: MLD; abrupt; arsenic; doping; high carrier concentration; monolayer; shallow
Year: 2015 PMID： 26111734 DOI： 10.1021/acsami.5b03768
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN： 1944-8244 Impact factor: 9.229