Literature DB >> 26105012

Aging mechanisms in amorphous phase-change materials.

Jean Yves Raty1, Wei Zhang2, Jennifer Luckas3, Chao Chen4, Riccardo Mazzarello5, Christophe Bichara6, Matthias Wuttig7.   

Abstract

Aging is a ubiquitous phenomenon in glasses. In the case of phase-change materials, it leads to a drift in the electrical resistance, which hinders the development of ultrahigh density storage devices. Here we elucidate the aging process in amorphous GeTe, a prototypical phase-change material, by advanced numerical simulations, photothermal deflection spectroscopy and impedance spectroscopy experiments. We show that aging is accompanied by a progressive change of the local chemical order towards the crystalline one. Yet, the glass evolves towards a covalent amorphous network with increasing Peierls distortion, whose structural and electronic properties drift away from those of the resonantly bonded crystal. This behaviour sets phase-change materials apart from conventional glass-forming systems, which display the same local structure and bonding in both phases.

Year:  2015        PMID: 26105012     DOI: 10.1038/ncomms8467

Source DB:  PubMed          Journal:  Nat Commun        ISSN: 2041-1723            Impact factor:   14.919


  23 in total

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Authors:  Matthias Wuttig; Noboru Yamada
Journal:  Nat Mater       Date:  2007-11       Impact factor: 43.841

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Authors:  Kostiantyn Shportko; Stephan Kremers; Michael Woda; Dominic Lencer; John Robertson; Matthias Wuttig
Journal:  Nat Mater       Date:  2008-07-11       Impact factor: 43.841

6.  High-pressure structural phase transitions in tellurium.

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Journal:  Phys Rev B Condens Matter       Date:  1996-07-15

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Journal:  J Phys Condens Matter       Date:  2009-09-01       Impact factor: 2.333

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Authors:  M Micoulaut
Journal:  J Chem Phys       Date:  2013-02-14       Impact factor: 3.488

10.  Atomistic origin of urbach tails in amorphous silicon.

Authors:  Y Pan; F Inam; M Zhang; D A Drabold
Journal:  Phys Rev Lett       Date:  2008-05-21       Impact factor: 9.161

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  20 in total

1.  Relation between bandgap and resistance drift in amorphous phase change materials.

Authors:  Martin Rütten; Matthias Kaes; Andreas Albert; Matthias Wuttig; Martin Salinga
Journal:  Sci Rep       Date:  2015-12-01       Impact factor: 4.379

2.  Structural, electronic and kinetic properties of the phase-change material Ge2Sb2Te5 in the liquid state.

Authors:  Mathias Schumacher; Hans Weber; Pál Jóvári; Yoshimi Tsuchiya; Tristan G A Youngs; Ivan Kaban; Riccardo Mazzarello
Journal:  Sci Rep       Date:  2016-06-08       Impact factor: 4.379

3.  Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films.

Authors:  R Mantovan; R Fallica; A Mokhles Gerami; T E Mølholt; C Wiemer; M Longo; H P Gunnlaugsson; K Johnston; H Masenda; D Naidoo; M Ncube; K Bharuth-Ram; M Fanciulli; H P Gislason; G Langouche; S Ólafsson; G Weyer
Journal:  Sci Rep       Date:  2017-08-15       Impact factor: 4.379

4.  Temporal correlation detection using computational phase-change memory.

Authors:  Abu Sebastian; Tomas Tuma; Nikolaos Papandreou; Manuel Le Gallo; Lukas Kull; Thomas Parnell; Evangelos Eleftheriou
Journal:  Nat Commun       Date:  2017-10-24       Impact factor: 14.919

Review 5.  A Review on Disorder-Driven Metal-Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials.

Authors:  Jiang-Jing Wang; Ya-Zhi Xu; Riccardo Mazzarello; Matthias Wuttig; Wei Zhang
Journal:  Materials (Basel)       Date:  2017-07-27       Impact factor: 3.623

6.  Evolution of crystal structures in GeTe during phase transition.

Authors:  Kwangsik Jeong; Seungjong Park; Dambi Park; Min Ahn; Jeonghwa Han; Wonjun Yang; Hong-Sik Jeong; Mann-Ho Cho
Journal:  Sci Rep       Date:  2017-04-19       Impact factor: 4.379

7.  Ge-Sb-S-Se-Te amorphous chalcogenide thin films towards on-chip nonlinear photonic devices.

Authors:  J-B Dory; C Castro-Chavarria; A Verdy; J-B Jager; M Bernard; C Sabbione; M Tessaire; J-M Fédéli; A Coillet; B Cluzel; P Noé
Journal:  Sci Rep       Date:  2020-07-17       Impact factor: 4.379

8.  Optical Properties and Local Structure Evolution during Crystallization of Ga16Sb84 Alloy.

Authors:  F Dong; Y R Guo; C Qiao; J J Wang; H Shen; W S Su; Y X Zheng; R J Zhang; L Y Chen; S Y Wang; X S Miao; M Xu
Journal:  Sci Rep       Date:  2018-06-25       Impact factor: 4.379

9.  Exploiting nanoscale effects in phase change memories.

Authors:  Benedikt Kersting; Martin Salinga
Journal:  Faraday Discuss       Date:  2019-02-18       Impact factor: 4.008

10.  Impact of defect occupation on conduction in amorphous Ge2Sb2Te5.

Authors:  Matthias Kaes; Martin Salinga
Journal:  Sci Rep       Date:  2016-08-16       Impact factor: 4.379

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