| Literature DB >> 26091394 |
Sheng-Chang Wang1, Muhammad Omar Shaikh2.
Abstract
Highly sensitive H2 gas sensors were prepared using pure and Pt-loaded SnO2 nanoparticles. Thick film sensors (~35 μm) were fabricated that showed a highly porous interconnected structure made of high density small grained nanoparticles. Using Pt as catalyst improved sensor response and reduced the operating temperature for achieving high sensitivity because of the negative temperature coefficient observed in Pt-loaded SnO2. The highest sensor response to 1000 ppm H2 was 10,500 at room temperature with a response time of 20 s. The morphology of the SnO2 nanoparticles, the surface loading concentration and dispersion of the Pt catalyst and the microstructure of the sensing layer all play a key role in the development of an effective gas sensing device.Entities:
Keywords: gas sensor; porous microstructure; thick film
Year: 2015 PMID: 26091394 PMCID: PMC4507593 DOI: 10.3390/s150614286
Source DB: PubMed Journal: Sensors (Basel) ISSN: 1424-8220 Impact factor: 3.576
Experimental reaction conditions for pure and Pt-loaded SnO2 nanoparticles.
| Sample | Atmosphere | SnO2 Solution | Surfactant OA (mmol) | PtCl2 Powder (mmol) | Temperature/Time (°C/h) | Average Crystal Size (nm) |
|---|---|---|---|---|---|---|
| (a) | Air | 1 | 0 |
| 340/2 |
|
| (b) | Air | 1 | 10 |
| 290/1 |
|
| (c) | Air | 1 | 10 |
| 290/1 |
|
| (d) | Air | 1 | 10 |
| 290/1 |
|
Figure 1(a) XRD of nanocrystals obtained after a reaction temperature of 30 min and 3 h in air; (b) Schematic of crystal structure during phasic transformation of tin oxide to tin dioxide; (c) Bright-field TEM image and HRTEM (inset) of SnO nanosheets; (d) SAED image of SnO nanosheets; (e) Bright-field TEM image and HRTEM (inset) of SnO2 nanoparticles; (f) SAED image of SnO2 nanoparticles.
Figure 2(a) Gas sensitivity as a function of operating temperature for pure SnO2 thick film sensor. Change in resistance of pure SnO2 gas sensors on exposure to 1000 ppm of H2 for 10 cycles at an operating temperature of (b) 200 °C, (c) 300 °C and (d) 400 °C.
Figure 3(a) XRD result of sensing film loaded with different concentrations of Pt; (b) Schematic illustration of thick film sensor utilizing interdigitated Pt electrodes. SEM image showing (c) top view and (d) cross sectional morphology of sensing film.
Figure 4Change in resistance of SnO2 gas sensors with different Pt loading concentrations upon exposure to 1000 ppm of H2 gas at an operating temperature of (a) 25 °C and (b) 300 °C.