| Literature DB >> 26083832 |
Gwangwoo Kim1, Hyunseob Lim1, Kyung Yeol Ma1, A-Rang Jang1, Gyeong Hee Ryu1, Minbok Jung1, Hyung-Joon Shin1, Zonghoon Lee1, Hyeon Suk Shin1.
Abstract
Heterostructures of hexagonal boron nitride (h-BN) and graphene have attracted a great deal of attention for potential applications in 2D materials. Although several methods have been developed to produce this material through the partial substitution reaction of graphene, the reverse reaction has not been reported. Though the endothermic nature of this reaction might account for the difficulty and previous absence of such a process, we report herein a new chemical route in which the Pt substrate plays a catalytic role. We propose that this reaction proceeds through h-BN hydrogenation; subsequent graphene growth quickly replaces the initially etched region. Importantly, this conversion reaction enables the controlled formation of patterned in-plane graphene/h-BN heterostructures, without needing the commonly employed protecting mask, simply by using a patterned Pt substrate.Entities:
Keywords: chemical vapor deposition; graphene; hexagonal boron nitride; in-plane heterostructure; platinum
Year: 2015 PMID: 26083832 DOI: 10.1021/acs.nanolett.5b01704
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189