Literature DB >> 26058428

Quasi-intrinsic colossal permittivity in Nb and In co-doped rutile TiO2 nanoceramics synthesized through a oxalate chemical-solution route combined with spark plasma sintering.

HyukSu Han1, Pascal Dufour, Sungwook Mhin, Jeong Ho Ryu, Christophe Tenailleau, Sophie Guillemet-Fritsch.   

Abstract

Nb and In co-doped rutile TiO2 nanoceramics (n-NITO) were successfully synthesized through a chemical-solution route combined with a low temperature spark plasma sintering (SPS) technique. The particle morphology and the microstructure of n-NITO compounds were nanometric in size. Various techniques such as X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), thermogravimetric (TG)/differential thermal analysis (DTA), Fourier transform infrared (FTIR), and Raman spectroscopy were used for the structural and compositional characterization of the synthesized compound. The results indicated that the as-synthesized n-NITO oxalate as well as sintered ceramic have a co-doped single phase of titanyl oxalate and rutile TiO2, respectively. Broadband impedance spectroscopy revealed that novel colossal permittivity (CP) was achieved in n-NITO ceramics exhibiting excellent temperature-frequency stable CP (up to 10(4)) as well as low dielectric loss (∼5%). Most importantly, detailed impedance data analyses of n-NITO compared to microcrystalline NITO (μ-NITO) demonstrated that the origin of CP in NITO bulk nanoceramics might be related with the pinned electrons in defect clusters and not to extrinsic interfacial effects.

Entities:  

Year:  2015        PMID: 26058428     DOI: 10.1039/c5cp02653a

Source DB:  PubMed          Journal:  Phys Chem Chem Phys        ISSN: 1463-9076            Impact factor:   3.676


  3 in total

1.  Origin of colossal dielectric permittivity of rutile Ti₀.₉In₀.₀₅Nb₀.₀₅O₂: single crystal and polycrystalline.

Authors:  Yongli Song; Xianjie Wang; Yu Sui; Ziyi Liu; Yu Zhang; Hongsheng Zhan; Bingqian Song; Zhiguo Liu; Zhe Lv; Lei Tao; Jinke Tang
Journal:  Sci Rep       Date:  2016-02-12       Impact factor: 4.379

2.  Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors.

Authors:  Xue Zhang; Hyeonju Lee; Jung-Hyok Kwon; Eui-Jik Kim; Jaehoon Park
Journal:  Materials (Basel)       Date:  2017-07-31       Impact factor: 3.623

3.  Colossal permittivity behavior and its origin in rutile (Mg1/3Ta2/3)xTi1-xO2.

Authors:  Wen Dong; Dehong Chen; Wanbiao Hu; Terry J Frankcombe; Hua Chen; Chao Zhou; Zhenxiao Fu; Xiaoyong Wei; Zhuo Xu; Zhifu Liu; Yongxiang Li; Yun Liu
Journal:  Sci Rep       Date:  2017-08-30       Impact factor: 4.379

  3 in total

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