| Literature DB >> 26030653 |
Carsten Becher1, Laura Maurel2, Ulrich Aschauer1, Martin Lilienblum1, César Magén3, Dennis Meier1, Eric Langenberg2, Morgan Trassin1, Javier Blasco4, Ingo P Krug5, Pedro A Algarabel4, Nicola A Spaldin1, José A Pardo6, Manfred Fiebig1.
Abstract
Local perturbations in complex oxides, such as domain walls, strain and defects, are of interest because they can modify the conduction or the dielectric and magnetic response, and can even promote phase transitions. Here, we show that the interaction between different types of local perturbations in oxide thin films is an additional source of functionality. Taking SrMnO3 as a model system, we use nonlinear optics to verify the theoretical prediction that strain induces a polar phase, and apply density functional theory to show that strain simultaneously increases the concentration of oxygen vacancies. These vacancies couple to the polar domain walls, where they establish an electrostatic barrier to electron migration. The result is a state with locally structured room-temperature conductivity consisting of conducting nanosized polar domains encased by insulating domain boundaries, which we resolve using scanning probe microscopy. Our 'nanocapacitor' domains can be individually charged, suggesting stable capacitance nanobits with a potential for information storage technology.Entities:
Year: 2015 PMID: 26030653 DOI: 10.1038/nnano.2015.108
Source DB: PubMed Journal: Nat Nanotechnol ISSN: 1748-3387 Impact factor: 39.213