| Literature DB >> 26030139 |
Rita J Macedo1, Sara E Harrison2, Tatiana S Dorofeeva1, James S Harris2, Richard A Kiehl1.
Abstract
The local electrical characteristics on the surface of MBE-grown Bi2Te3 are probed under ambient conditions by conductive atomic force microscopy. Nanoscale mapping reveals a 10-100× enhancement in current at step-edges compared to that on terraces. Analysis of the local current-voltage characteristics indicates that the transport mechanism is similar for step-edges and terraces. Comparison of the results with those for control samples shows that the current enhancement is not a measurement artifact but instead is due to local differences in electronic properties. The likelihood of various possible mechanisms is discussed. The absence of enhancement at the step-edges for graphite terraces is consistent with the intriguing possibility that spin-orbit coupling and topological effects play a significant role in the step-edge current enhancement in Bi2Te3.Entities:
Keywords: Bismuth telluride; atomic force microscopy; molecular beam epitaxy; topological insulators; van der Waals epitaxy
Year: 2015 PMID: 26030139 DOI: 10.1021/acs.nanolett.5b00542
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189