Literature DB >> 26024183

Ultrafast Atomic Diffusion Inducing a Reversible (2sqrt[3]×2sqrt[3])R30°↔(sqrt[3]×sqrt[3])R30° Transition on Sn/Si(111)∶B.

W Srour1,2, Daniel G Trabada3, J I Martínez3, F Flores3, J Ortega3, M Abuín4, Y Fagot-Revurat1, B Kierren1, A Taleb-Ibrahimi5, D Malterre1, A Tejeda2,6.   

Abstract

Dynamical phase transitions are a challenge to identify experimentally and describe theoretically. Here, we study a new reconstruction of Sn on silicon and observe a reversible transition where the surface unit cell divides its area by a factor of 4 at 250 °C. This phase transition is explained by the 24-fold degeneracy of the ground state and a novel diffusive mechanism, where four Sn atoms arranged in a snakelike cluster wiggle at the surface exploring collectively the different quantum mechanical ground states.

Year:  2015        PMID: 26024183     DOI: 10.1103/PhysRevLett.114.196101

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  2 in total

1.  Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping.

Authors:  Fangfei Ming; Daniel Mulugeta; Weisong Tu; Tyler S Smith; Paolo Vilmercati; Geunseop Lee; Ying-Tzu Huang; Renee D Diehl; Paul C Snijders; Hanno H Weitering
Journal:  Nat Commun       Date:  2017-03-07       Impact factor: 14.919

2.  Uncertainty principle for experimental measurements: Fast versus slow probes.

Authors:  P Hansmann; T Ayral; A Tejeda; S Biermann
Journal:  Sci Rep       Date:  2016-02-01       Impact factor: 4.379

  2 in total

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