Literature DB >> 26010011

Flexible MoS2 Field-Effect Transistors for Gate-Tunable Piezoresistive Strain Sensors.

Meng-Yen Tsai1, Alexey Tarasov1, Zohreh R Hesabi1, Hossein Taghinejad1, Philip M Campbell1, Corey A Joiner1, Ali Adibi1, Eric M Vogel1.   

Abstract

Atomically thin molybdenum disulfide (MoS2) is a promising two-dimensional semiconductor for high-performance flexible electronics, sensors, transducers, and energy conversion. Here, piezoresistive strain sensing with flexible MoS2 field-effect transistors (FETs) made from highly uniform large-area films is demonstrated. The origin of the piezoresistivity in MoS2 is the strain-induced band gap change, which is confirmed by optical reflection spectroscopy. In addition, the sensitivity to strain can be tuned by more than 1 order of magnitude by adjusting the Fermi level via gate biasing.

Entities:  

Keywords:  TMDC; field-effect transistor; flexible electronics; gauge factor; piezoresistive strain sensing; transition metal dichalcogenide; wafer-scale MoS2

Year:  2015        PMID： 26010011     DOI： 10.1021/acsami.5b02336

Source DB:  PubMed          Journal:  ACS Appl Mater Interfaces        ISSN： 1944-8244            Impact factor:   9.229


  9 in total

Review 1.  A review of molybdenum disulfide (MoS2) based photodetectors: from ultra-broadband, self-powered to flexible devices.

Authors:  Hari Singh Nalwa
Journal:  RSC Adv       Date:  2020-08-19       Impact factor: 4.036

Review 2.  Ten Years Progress of Electrical Detection of Heavy Metal Ions (HMIs) Using Various Field-Effect Transistor (FET) Nanosensors: A Review.

Authors:  Shaili Falina; Mohd Syamsul; Nuha Abd Rhaffor; Sofiyah Sal Hamid; Khairu Anuar Mohamed Zain; Asrulnizam Abd Manaf; Hiroshi Kawarada
Journal:  Biosensors (Basel)       Date:  2021-11-25

3.  Strain Gated Bilayer Molybdenum Disulfide Field Effect Transistor with Edge Contacts.

Authors:  Yu Chai; Shanshan Su; Dong Yan; Mihrimah Ozkan; Roger Lake; Cengiz S Ozkan
Journal:  Sci Rep       Date:  2017-02-10       Impact factor: 4.379

4.  Dynamic tungsten diselenide nanomaterials: supramolecular assembly-induced structural transition over exfoliated two-dimensional nanosheets.

Authors:  Adem Ali Muhabie; Ching-Hwa Ho; Belete Tewabe Gebeyehu; Shan-You Huang; Chih-Wei Chiu; Juin-Yih Lai; Duu-Jong Lee; Chih-Chia Cheng
Journal:  Chem Sci       Date:  2018-05-31       Impact factor: 9.825

Review 5.  Insulators for 2D nanoelectronics: the gap to bridge.

Authors:  Yury Yu Illarionov; Theresia Knobloch; Markus Jech; Mario Lanza; Deji Akinwande; Mikhail I Vexler; Thomas Mueller; Max C Lemme; Gianluca Fiori; Frank Schwierz; Tibor Grasser
Journal:  Nat Commun       Date:  2020-07-07       Impact factor: 14.919

6.  Giant gauge factor of Van der Waals material based strain sensors.

Authors:  Wenjie Yan; Huei-Ru Fuh; Yanhui Lv; Ke-Qiu Chen; Tsung-Yin Tsai; Yuh-Renn Wu; Tung-Ho Shieh; Kuan-Ming Hung; Juncheng Li; Duan Zhang; Cormac Ó Coileáin; Sunil K Arora; Zhi Wang; Zhaotan Jiang; Ching-Ray Chang; Han-Chun Wu
Journal:  Nat Commun       Date:  2021-04-01       Impact factor: 14.919

Review 7.  Mechanical sensors based on two-dimensional materials: Sensing mechanisms, structural designs and wearable applications.

Authors:  Tingting Yang; Xin Jiang; Yuehua Huang; Qiong Tian; Li Zhang; Zhaohe Dai; Hongwei Zhu
Journal:  iScience       Date:  2022-01-01

8.  High-performance ReS2 photodetectors enhanced by a ferroelectric field and strain field.

Authors:  Xiaochi Tai; Yan Chen; Shuaiqin Wu; Hanxue Jiao; Zhuangzhuang Cui; Dongyang Zhao; Xinning Huang; Qianru Zhao; Xudong Wang; Tie Lin; Hong Shen; Xiangjian Meng; Jianlu Wang; Junhao Chu
Journal:  RSC Adv       Date:  2022-02-09       Impact factor: 3.361

9.  Paper-based broadband flexible photodetectors with van der Waals materials.

Authors:  Erfan Mahmoodi; Morteza Hassanpour Amiri; Abdollah Salimi; Riccardo Frisenda; Eduardo Flores; José R Ares; Isabel J Ferrer; Andres Castellanos-Gomez; Foad Ghasemi
Journal:  Sci Rep       Date:  2022-07-22       Impact factor: 4.996
  9 in total

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