| Literature DB >> 25989536 |
Ivelina Georgieva1, Adélia J A Aquino2,3, Felix Plasser3, Natasha Trendafilova1, Andreas Köhn4, Hans Lischka2,3.
Abstract
The structural processes leading to dual fluorescence ofEntities:
Year: 2015 PMID: 25989536 PMCID: PMC4476306 DOI: 10.1021/acs.jpca.5b03282
Source DB: PubMed Journal: J Phys Chem A ISSN: 1089-5639 Impact factor: 2.781
Figure 1Optimized geometries of DMABN in the ground state (C2 symmetry) (a), in the S1(LE) state (C2) (b), in the CT state (C1) (c), in the S2/S1 MXS (C2) (d) at the MRCIS (8,7)/ANO-DZ level, and in the πσ* state (C) (e) at the ADC(2)/TZVP level. For the ground-state structure, the MRCIS (8,7)/ANO-DZ results are given in roman type, MP2/SVP data are presented in bold, and the experimental data in italic.
Computed Vertical Excitation Energies, ΔE (eV), of the Two Lowest Singlet Exited States of DMABN at the MP2/SVP Optimized Ground-State Geometry in C2 Symmetry (θ, δ = 0°)
| method | state | DZ | +P/DZ | TZ | +P/TZ |
|---|---|---|---|---|---|
| SA3-CASSCF(10,9) | 1B2 (LE) | 4.626 (0.008) | – | 4.632 | – |
| 1A1 (CT) | 5.969 (0.667) | – | 5.929 | – | |
| MRCIS(10,9) | 1B2 (LE) | 4.621 (0.026) | 4.516 | 4.598 | 4.468 |
| 1A1 (CT) | 4.984 (0.670) | 4.662 | 4.936 | 4.601 | |
| MRCIS(8,7) | 1B2 (LE) | 4.705 (0.025) | 4.325 | 4.768 | 4.433 |
| 1A1 (CT) | 5.269 (0.688) | 4.902 | 5.113 | 4.738 | |
| MRCISD(8,7) | 1B2 (LE) | 5.054 | 4.438 | 5.061 | 4.470 |
| 1A1 (CT) | 5.606 | 4.917 | 5.599 | 4.941 | |
| MRCISD(6,5) | 1B2 (LE) | 5.361 | 4.525 | 5.382 | 4.617 |
| 1A1 (CT) | 5.736 | 5.100 | 5.727 | 5.124 | |
| CASPT2/ANO | 1B (LE) | 4.05 (0.010) | |||
| 1A (CT) | 4.41 (0.416) | ||||
| CASPT2 | LE | 4.297 | |||
| CT | 4.610 | ||||
| CC2/TZVPP | LE | 4.41 | |||
| CT | 4.77 | ||||
| exptl | S10 (LE) | 3.995 | |||
| S1 (LE) | 4.130 | ||||
| S2 (CT) | 4.569 |
Oscillator strengths (absorption) are given in parentheses.
Total energy of 1B2(LE) state: −455.6544360 au, calculated with the ANO-DZ basis set (atomic natural orbital (ANO) basis set - (10s6p3d)/[3s2p1d] basis for N and C and (7s)/[2s] for H) and Pople correction (+P) .
Total energy of 1A1(CT) state: −455.6332238 au calculated with the ANO-DZ basis set and Pople correction (+P).
Ref (23).
Ref (30).
Ref (31).
Refs (43 and 45).
0–0 transition.
Band maximum.
MRCIS(8,7)+P/ANO-DZ Vertical (vert) Absorption and Fluorescence (fl) Energies (eV) and Minimum-to-Minimum (m-m) Energies in the Gas Phase and in AN Solution of Optimized Ground-State, LE, and CT structures of DMABN
| gas
phase | AN | ||||
|---|---|---|---|---|---|
| structure (symmetry) | state | calcd | exptl | calcdnoneq | exptl |
| gr. state ( | vert. 11B2 (ππ*) | 4.32 (0.025) | 4.13 | 4.34 | 3.86 |
| vert. 21A1 (ππ*) | 4.90 (0.688) | 4.57 | 4.75 | 4.24 | |
| LE state ( | T | 4.13 | 4.15 | ||
| ν00 11B (ππ*) | (3.95) | 3.998 | |||
| fl 11B (ππ*) | 3.93 (0.012) | 3.68 | 3.94 | 3.44 | |
| CT state ( | T | 4.29 | 3.90 | ||
| fl 21A (ππ*) | 3.27 (0.004) | 3.55 (extrap.) | 2.77 | 2.52 | |
Oscillator strengths (absorption) are given in parentheses.
Ref (43).
Refs (3, 21, and 49).
Adiabatic excitation energy (rel to the ground-state minimum).
Position of 0–0 transition (approximation); the result in ref (27) was used. ν00 energy is about 0.2 eV below Te energy for LE state.
Laser-induced fluorescence (LIF) excitation spectrum in the gas phase, ref (45).
Figure 2LE/CT energy diagram (eV) of DMABN in vacuum (black) and acetonitrile (red) calculated at the MRCIS(8,7)+P/ANO-DZ level. The transition energies in acetonitrile solution are given in parentheses.
Calculated Dipole Moments, μ (Debye), for DMABN in Comparison with Experimental Data
| method | μ (GS in | μ (LE) | μ (CT) |
|---|---|---|---|
| MRCIS(8,7)/ANO-DZ | 7.1 | 9.6 | 15.3 |
| CC2 | 7.4 | 10.1 | 13.3 |
| CASSCF(12,11) | 6.1 | 6.0/6.6 | 13.5 |
| exptl | 6.6 | 9.7/9 | 17 ± 1 |
Ref (31).
Ref (29).
Ref (28).
Refs (77 and 78).
Figure 3Rigid potential energy curves along the twisting angle θ (the wagging angle δ is fixed at 0°) (a) and charge transfer, qring+CN (e) (b) for the two lowest singlet excited states of DMABN in the gas phase at the MRCIS(8,7)+P/ANO-DZ level. Energies are given relative to the S0 energy of the ground-state minimum at C2 symmetry (θ, δ = 0°).
Figure 4Potential energy surfaces along the twisting (θ) and wagging (δ) coordinates of the two lowest singlet excited states of DMABN in the gas phase at the MRCIS(8,7)+P/ANO-DZ level.
Figure 5Potential energy curves along the twisting angle θ (the wagging angle δ is fixed at 0°) (a) and charge transfer, qring+CN (e) (b), of the two lowest singlet excited states of DMABN in acetonitrile for equilibrium solvent conditions at the MRCIS(8,7)+P/ANO-DZ level.
Figure 6Potential energy surfaces along the twisting (θ) and wagging (δ) coordinates of the two lowest singlet excited states of DMABN in acetonitrile for equilibrium conditions at the MRCIS(8,7)+P/ANO-DZ level.
Figure 7g- and h-vectors for the MXS between S2 and S1 computed at the MRCIS(8,7)/ANO-DZ level in the gas phase.
Figure 8Rigid potential energy curves along the CCN angle for the lowest singlet excited states of DMABN under Cs symmetry restriction (a) in the gas phase and (b) in AN solution at the ADC(2)/TZVP level. Starting point is the MP2/SVP optimized ground-state geometry of DMABN (C2, ∠CCN = 180°).
Energies, ΔE (eV), Relative to the Ground-State (C2); Oscillator Strengths, f; and Dipole Moment, μ (Debye), for the Low-Lying Excited States in DMABN Using the ADC(2)/TZVP Method
| in vacuo | AN sol | |||||
|---|---|---|---|---|---|---|
| structure | Δ | μ | Δ | μ | ||
| gr. state/S1 | 4.39 | 11.2 | 0.036 | 4.23 | 13.0 | 0.041 |
| gr. state/S2 | 4.68 | 14.8 | 0.597 | 4.20 | 17.6 | 0.675 |
| LE (min.)/S1 | m-m 4.18 | 11.8 | 0.036 | 3.89 | 13.6 | 0.040 |
| πσ*/S1 | 5.10 | 18.7 | 0.000 | 3.85 | 15.9 | 0.000 |
| MXS/S1 | 4.21 | 16.4 | 0.219 | 3.48 | 18.5 | 0.244 |
| TICT/S1 | 3.99 | 17.9 | 0.000 | 3.17 | 19.6 | 0.000 |
Optimized geometries of LE, MXS, TICT structures at MRCIS (8,7)/ANO-DZ level and of πσ* structure at ADC(2)/TZVP level were used.