| Literature DB >> 25989313 |
L V Kulik1, A V Gorbunov1, A S Zhuravlev1, V B Timofeev1, S Dickmann1, I V Kukushkin1.
Abstract
An experimental technique for the indirect manipulation and detection of electron spins entangled in two-dimensional magnetoexcitons has been developed. The kinetics of the spin relaxation has been investigated. Photoexcited spin-magnetoexcitons were found to exhibit extremely slow relaxation in specific quantum Hall systems, fabricated in high mobility GaAs/AlGaAs structures; namely, the relaxation time reaches values over one hundred microseconds. A qualitative explanation of this spin-relaxation kinetics is presented. Its temperature and magnetic field dependencies are discussed within the available theoretical framework.Entities:
Year: 2015 PMID: 25989313 PMCID: PMC4437318 DOI: 10.1038/srep10354
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1Photoluminescence (PL) and photoinduced resonant reflectance (PRR) spectra taken at v = 2 in a 17 nm quantum well (the dark mobility is 5 × 106 cm2/Vs, the electron concentration is 2.4 × 1011 cm−2) for the magnetic field H = 5 T normal to the quantum well and bath temperature of 0.45 K. The diagram shows how the lowest energy excited state forms. The inset demonstrates the inelastic light scattering (ILS) spectrum of the cyclotron spin-flip exciton taken at similar experimental conditions (perpendicular magnetic field and temperature) with a 5 T extra–parallel magnetic field to enhance the Zeeman energy splitting above the experimental spectral resolution. Detailed resonant reflectance (RR) spectra with (closed dots) and without (open dots) extra pumping are shown in the bottom. (top) Scheme of the experimental setup.
Figure 2Example of a photoinduced resonant reflectance (PRR) decay curve with the apparatus function of the chopper (red). The inset shows two decay kinetics for quantum wells of 35 (longer) and 17 nm (shorter) width taken at v = 2 at 4 T perpendicular magnetic field and bath temperature of 0.45 K. The electron concentration in the quantum wells is 2.0 × 1011 cm-2, the mobilities are 1.5 × 107 cm2/Vs and 5 × 106 cm2/Vs, respectively.
Figure 3An assembled graph of low temperature relaxation constant τ0 as a function of magnetic field. The small points denote the magnetic field dependence for quantum wells of 17 nm widths. The large points denote the magnetic field dependence for quantum wells of 35 nm widths. The curves are drawn for clarity. Top inset: relaxation rate vs. temperature in logarithmic (ln) scale taken at v = 2 in the 35 nm quantum well at 4 T magnetic field (dots) with a fitting using two relaxation mechanisms, activated and temperature-independent (line).The diagram shows the electron size quantized envelopes for two quantum wells of 17 and 35 nm widths and a schematic wave function of the phonon emitted to illustrate an incommensurability between the phonon wave length and the extent of the electron wave function in the growth direction of the quantum wells.