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Literature DB >> 25988597

Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors.

Shu Nakaharai¹, Mahito Yamamoto¹, Keiji Ueno², Yen-Fu Lin^1,3, Song-Lin Li¹, Kazuhito Tsukagoshi¹.

Abstract

A doping-free transistor made of ambipolar α-phase molybdenum ditelluride (α-MoTe2) is proposed in which the transistor polarity (p-type and n-type) is electrostatically controlled by dual top gates. The voltage signal in one of the gates determines the transistor polarity, while the other gate modulates the drain current. We demonstrate the transistor operation experimentally, with electrostatically controlled polarity of both p- and n-type in a single transistor.

Entities: Chemical

Keywords: ambipolar; field-effect transistor; molybdenum ditelluride; polarity control; transition metal dichalcogenide

Year: 2015 PMID： 25988597 DOI： 10.1021/acsnano.5b00736

Source DB: PubMed Journal: ACS Nano ISSN： 1936-0851 Impact factor: 15.881

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Cited

6 in total

1. Control of polarity in multilayer MoTe₂ field-effect transistors by channel thickness.

Authors: Asha Rani; Kyle DiCamillo; Sergiy Krylyuk; Ratan Debnath; Payam Taheri; Makarand Paranjape; Can E Korman; Mona E Zaghloul; Albert V Davydov
Journal: Proc SPIE Int Soc Opt Eng Date: 2018

2. The non-volatile electrostatic doping effect in MoTe₂ field-effect transistors controlled by hexagonal boron nitride and a metal gate.

Authors: Muhammad Asghar Khan; Muhammad Farooq Khan; Shania Rehman; Harshada Patil; Ghulam Dastgeer; Byung Min Ko; Jonghwa Eom
Journal: Sci Rep Date: 2022-07-15 Impact factor: 4.996

6. Dynamically controllable polarity modulation of MoTe₂ field-effect transistors through ultraviolet light and electrostatic activation.

Authors: Enxiu Wu; Yuan Xie; Jing Zhang; Hao Zhang; Xiaodong Hu; Jing Liu; Chongwu Zhou; Daihua Zhang
Journal: Sci Adv Date: 2019-05-03 Impact factor: 14.136

6 in total

Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors.

1. Control of polarity in multilayer MoTe₂ field-effect transistors by channel thickness.

2. The non-volatile electrostatic doping effect in MoTe₂ field-effect transistors controlled by hexagonal boron nitride and a metal gate.

3. Polarity control in WSe2 double-gate transistors.

4. Polymorphism Control of Layered MoTe₂ through Two-Dimensional Solid-Phase Crystallization.

5. Formation of an MoTe₂ based Schottky junction employing ultra-low and high resistive metal contacts.

6. Dynamically controllable polarity modulation of MoTe₂ field-effect transistors through ultraviolet light and electrostatic activation.

Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors.

1. Control of polarity in multilayer MoTe2 field-effect transistors by channel thickness.

2. The non-volatile electrostatic doping effect in MoTe2 field-effect transistors controlled by hexagonal boron nitride and a metal gate.

3. Polarity control in WSe2 double-gate transistors.

4. Polymorphism Control of Layered MoTe2 through Two-Dimensional Solid-Phase Crystallization.

5. Formation of an MoTe2 based Schottky junction employing ultra-low and high resistive metal contacts.

6. Dynamically controllable polarity modulation of MoTe2 field-effect transistors through ultraviolet light and electrostatic activation.

1. Control of polarity in multilayer MoTe₂ field-effect transistors by channel thickness.

2. The non-volatile electrostatic doping effect in MoTe₂ field-effect transistors controlled by hexagonal boron nitride and a metal gate.

4. Polymorphism Control of Layered MoTe₂ through Two-Dimensional Solid-Phase Crystallization.

5. Formation of an MoTe₂ based Schottky junction employing ultra-low and high resistive metal contacts.

6. Dynamically controllable polarity modulation of MoTe₂ field-effect transistors through ultraviolet light and electrostatic activation.