Literature DB >> 25973913

Pt/Ta2 O5 /HfO2- x /Ti resistive switching memory competing with multilevel NAND flash.

Jung Ho Yoon1, Kyung Min Kim2, Seul Ji Song1, Jun Yeong Seok1, Kyung Jean Yoon1, Dae Eun Kwon1, Tae Hyung Park1, Young Jae Kwon1, Xinglong Shao1, Cheol Seong Hwang1.   

Abstract

Pt/Ta2 O5 /HfO2- x /Ti resistive switching memory with a new circuit design is presented as a feasible candidate to succeed multilevel-cell (MLC) NAND flash memory. This device has the following characteristics: 3 bit MLC, electroforming-free, self-rectifying, much higher cell resistance than interconnection wire resistance, low voltage operation, low power consumption, long-term reliability, and only an electronic switching mechanism, without an ionic-motion-related mechanism.
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords:  electroforming-free; multilevel switching; resistive switching memory; self-rectifying; uniformity

Year:  2015        PMID： 25973913     DOI： 10.1002/adma.201501167

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  14 in total

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