| Literature DB >> 25973767 |
Zhibin Yang1, Jianhua Hao1, Shuoguo Yuan1, Shenghuang Lin1, Hei Man Yau1, Jiyan Dai1, Shu Ping Lau1.
Abstract
Amorphous black phosphorus (a-BP) ultrathin films are deposited by pulsed laser deposition. a-BP field-effect trans-istors, exhibiting high carrier mobility and moderate on/off current ratio, are demonstrated. Thickness dependence of the bandgap, mobility, and on/off ratio are observed. These results offer not only a new nanoscale member in the BP family, but also a new opportunity to develop nano-electronic devices.Entities:
Keywords: amorphous ultrathin films; black phosphorus; field-effect transistors; pulsed laser deposition; wafer-scale
Year: 2015 PMID: 25973767 DOI: 10.1002/adma.201500990
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849