Graphene-assisted Si-InSb thermophotovoltaic system for low temperature applications.

The present work theoretically analyzes the performance of the near-field thermophotovoltaic (TPV) energy conversion device for low temperature applications (Tsource ∼ 500 K). In the proposed TPV system, doped Si is employed as the source because its optical property can be readily tuned by changing the doping concentration, and InSb is selected as a TPV cell because of its low bandgap energy (0.17 eV). In order to enhance the near-field thermal radiation between the source and the TPV cell, monolayer of graphene is coated on the cell side so that surface plasmon can play a critical role in heat transfer. It is found that monolayer of graphene can significantly enhance the power throughput by 30 times and the conversion efficiency by 6.1 times compared to the case without graphene layer. The resulting maximum conversion efficiency is 19.4% at 10-nm vacuum gap width.