Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnO(x)-based resistive random access memory devices.

Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnO(x)) resistive random access memory (RRAM) devices using hydrogen peroxide. Our results imply that solution processed GaZnO(x) RRAM devices could be one of the candidates for the development of low cost RRAM.