Literature DB >> 25933339

Intermediate band solar cell with extreme broadband spectrum quantum efficiency.

A Datas1, E López1, I Ramiro1, E Antolín1, A Martí1, A Luque1, R Tamaki2, Y Shoji2, T Sogabe2, Y Okada2.   

Abstract

We report, for the first time, about an intermediate band solar cell implemented with InAs/AlGaAs quantum dots whose photoresponse expands from 250 to ∼6000  nm. To our knowledge, this is the broadest quantum efficiency reported to date for a solar cell and demonstrates that the intermediate band solar cell is capable of producing photocurrent when illuminated with photons whose energy equals the energy of the lowest band gap. We show experimental evidence indicating that this result is in agreement with the theory of the intermediate band solar cell, according to which the generation recombination between the intermediate band and the valence band makes this photocurrent detectable.

Year:  2015        PMID: 25933339     DOI: 10.1103/PhysRevLett.114.157701

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  3 in total

1.  Infrared photodetector sensitized by InAs quantum dots embedded near an Al0.3Ga0.7As/GaAs heterointerface.

Authors:  Takahiko Murata; Shigeo Asahi; Stefano Sanguinetti; Takashi Kita
Journal:  Sci Rep       Date:  2020-07-15       Impact factor: 4.379

2.  Temperature Dependence of Carrier Extraction Processes in GaSb/AlGaAs Quantum Nanostructure Intermediate-Band Solar Cells.

Authors:  Yasushi Shoji; Ryo Tamaki; Yoshitaka Okada
Journal:  Nanomaterials (Basel)       Date:  2021-01-29       Impact factor: 5.076

3.  Modeling Quantum Dot Systems as Random Geometric Graphs with Probability Amplitude-Based Weighted Links.

Authors:  Lucas Cuadra; José Carlos Nieto-Borge
Journal:  Nanomaterials (Basel)       Date:  2021-02-02       Impact factor: 5.076

  3 in total

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